yesThe behavior of silicon wafers in the starting state (after both irradiation with nitrogen ions and after nitrogen ion irradiation and the deposition of an 80-nm-thick carbon coating) has been investigatedBelgorod State Universit
The implantation of nitrogen at an elevated temperature with a dose of (2,5-4)T016 ions/cm2 at 200 k...
The implantation of nitrogen at an elevated temperature with a dose of (2,5-4)T016 ions/cm2 at 200 k...
Preliminary studies have been performed on the feasibility of carbon-silicon nitride formation Q3-Si...
The behavior of silicon wafers in the starting state (after both irradiation with nitrogen ions and ...
We investigated how MeV nitrogen ion implantation affects the resistivity transition in Czochralski ...
The dependences that the specific conductivity has on nitrogen pressure and thickness show nonlinear...
yesThe dependences that the specific conductivity has on nitrogen pressure and thickness show nonlin...
In this work the surface of (4 0 0) p-type Si wafers is bombarded with 29 keV nitrogen ions at vario...
In this work the surface of (4 0 0) p-type Si wafers is bombarded with 29 keV nitrogen ions at vario...
Surfaces of silicon wafers implanted with N and C, respectively, and aluminum 5052 implanted with N ...
The paper considers structural and physicomechanical properties of silicon-carbon coatings deposited...
A surface hardenable low alloy carbon steel was implanted with medium energy (20-50 KeV) N2 + ions t...
The influence of ion energy on the magnitude of internal stress, electric conductivity, and surface ...
yesThe influence of ion energy on the magnitude of internal stress, electric conductivity, and surfa...
In our work, nitrogen ions were implanted into separation-by-implantation-of-oxygen (SIMOX) wafers t...
The implantation of nitrogen at an elevated temperature with a dose of (2,5-4)T016 ions/cm2 at 200 k...
The implantation of nitrogen at an elevated temperature with a dose of (2,5-4)T016 ions/cm2 at 200 k...
Preliminary studies have been performed on the feasibility of carbon-silicon nitride formation Q3-Si...
The behavior of silicon wafers in the starting state (after both irradiation with nitrogen ions and ...
We investigated how MeV nitrogen ion implantation affects the resistivity transition in Czochralski ...
The dependences that the specific conductivity has on nitrogen pressure and thickness show nonlinear...
yesThe dependences that the specific conductivity has on nitrogen pressure and thickness show nonlin...
In this work the surface of (4 0 0) p-type Si wafers is bombarded with 29 keV nitrogen ions at vario...
In this work the surface of (4 0 0) p-type Si wafers is bombarded with 29 keV nitrogen ions at vario...
Surfaces of silicon wafers implanted with N and C, respectively, and aluminum 5052 implanted with N ...
The paper considers structural and physicomechanical properties of silicon-carbon coatings deposited...
A surface hardenable low alloy carbon steel was implanted with medium energy (20-50 KeV) N2 + ions t...
The influence of ion energy on the magnitude of internal stress, electric conductivity, and surface ...
yesThe influence of ion energy on the magnitude of internal stress, electric conductivity, and surfa...
In our work, nitrogen ions were implanted into separation-by-implantation-of-oxygen (SIMOX) wafers t...
The implantation of nitrogen at an elevated temperature with a dose of (2,5-4)T016 ions/cm2 at 200 k...
The implantation of nitrogen at an elevated temperature with a dose of (2,5-4)T016 ions/cm2 at 200 k...
Preliminary studies have been performed on the feasibility of carbon-silicon nitride formation Q3-Si...