Add to ORKGJournal ArticleOrdering produced in Gao.5Ino.5P epitaxial layers grown by OMVPE can be controlled by variations in the substrate misorientation as well as the growth temperature and the growth rate. The ordering produced at a growth temperature of 620°C and a relatively low growth rate of 0.5 /μm/hr is found to depend strongly on both the direction and angle of substrate misorientation
The ternary III-V semiconductor Ga0.52In0.48P grown on GaAs substrate has been studied for visible w...
Journal ArticleSubstrate orientation strongly affects Cu-Pt ordering in Ga0.5In0.5P layers grown by ...
Journal ArticleA natural monolayer 111% superlattice -- the CuPt ordered structure -- is formed spon...
Journal ArticleEpitaxial layers of Ga,Tn,_,P with 1=0.52 have been grown by-organometallic vapor-pha...
Journal ArticleThe kinetic processes leading to ordering in Gas,, In o.4P8 have been studied by obse...
Journal ArticleGae,,In,,P layers have been grown by organometallic vapor phase epitaxy on GaAs subst...
Journal ArticleA Ga0.52In0.58p order/disorder heterostructure having a band-gap energy difference ex...
Journal ArticlePresents information from an experiment on the step structure and ordering in GalnP. ...
Journal ArticleGa and In atoms in Ga0.52In0.48P layers spontaneously segregate to form alternating I...
Journal ArticleCompositional ordering has been observed in a wide variety of III/V semiconductor all...
Journal ArticleCuPt ordering is widely observed in GaInP epitaxial layers grown by organometallic va...
Journal ArticleExamines the effect of step structure on ordering in gallium indium phosphite (GaInP)...
Journal ArticleCu-Pt ordering is widely observed in Ga0.5In0.5P layers grown by organometallic vapor...
We use transmission electron microscopy to characterize the morphology of InGaP epitaxial layers gro...
Journal ArticleHeterostructures and quantum wells can be produced in GaInP without changing the soli...
The ternary III-V semiconductor Ga0.52In0.48P grown on GaAs substrate has been studied for visible w...
Journal ArticleSubstrate orientation strongly affects Cu-Pt ordering in Ga0.5In0.5P layers grown by ...
Journal ArticleA natural monolayer 111% superlattice -- the CuPt ordered structure -- is formed spon...
Journal ArticleEpitaxial layers of Ga,Tn,_,P with 1=0.52 have been grown by-organometallic vapor-pha...
Journal ArticleThe kinetic processes leading to ordering in Gas,, In o.4P8 have been studied by obse...
Journal ArticleGae,,In,,P layers have been grown by organometallic vapor phase epitaxy on GaAs subst...
Journal ArticleA Ga0.52In0.58p order/disorder heterostructure having a band-gap energy difference ex...
Journal ArticlePresents information from an experiment on the step structure and ordering in GalnP. ...
Journal ArticleGa and In atoms in Ga0.52In0.48P layers spontaneously segregate to form alternating I...
Journal ArticleCompositional ordering has been observed in a wide variety of III/V semiconductor all...
Journal ArticleCuPt ordering is widely observed in GaInP epitaxial layers grown by organometallic va...
Journal ArticleExamines the effect of step structure on ordering in gallium indium phosphite (GaInP)...
Journal ArticleCu-Pt ordering is widely observed in Ga0.5In0.5P layers grown by organometallic vapor...
We use transmission electron microscopy to characterize the morphology of InGaP epitaxial layers gro...
Journal ArticleHeterostructures and quantum wells can be produced in GaInP without changing the soli...
The ternary III-V semiconductor Ga0.52In0.48P grown on GaAs substrate has been studied for visible w...
Journal ArticleSubstrate orientation strongly affects Cu-Pt ordering in Ga0.5In0.5P layers grown by ...
Journal ArticleA natural monolayer 111% superlattice -- the CuPt ordered structure -- is formed spon...