Journal ArticleExamines the effect of step structure on ordering in gallium indium phosphite (GaInP) using atomic force microscopy. Coverage of the surface by islands several monolayers in height with elongated direction; Formation of the edges of the islands; Role of the observations in explaining the nature of the order twin boundaries in ordered GaInP
Journal ArticleHeterostructures and quantum wells can be produced in GaInP without changing the soli...
Journal ArticleCompositional ordering has been observed in a wide variety of III/V semiconductor all...
Journal ArticlePresents the results of a study of Zinc dopant effects on both step structure and ord...
Journal ArticleCuPt ordering is widely observed in GaInP epitaxial layers grown by organometallic va...
Journal ArticlePresents information from an experiment on the step structure and ordering in GalnP. ...
Journal ArticleGa and In atoms in Ga0.52In0.48P layers spontaneously segregate to form alternating I...
Journal ArticleCu-Pt ordering is widely observed in Ga0.5In0.5P layers grown by organometallic vapor...
Journal ArticleThe step structure and CuPt ordering in GaInP layers grown by organometallic vapor ph...
Journal ArticleGae,,In,,P layers have been grown by organometallic vapor phase epitaxy on GaAs subst...
Journal ArticleA natural monolayer 111% superlattice -- the CuPt ordered structure -- is formed spon...
Journal ArticleThe donor Te has been added to GaInP during organometallic vapor phase epitaxial grow...
Journal ArticleEpitaxial layers of Ga,Tn,_,P with 1=0.52 have been grown by-organometallic vapor-pha...
Journal ArticleThe effect of the isoelectronic surfactant Bi on surface structure and ordering has b...
Journal ArticleTransmission electron microscope (TEM) and transmission electron diffraction (TED) st...
Journal ArticleThe surface structure of Ga0.52In0.48P was studied by surface photoabsorption. An abs...
Journal ArticleHeterostructures and quantum wells can be produced in GaInP without changing the soli...
Journal ArticleCompositional ordering has been observed in a wide variety of III/V semiconductor all...
Journal ArticlePresents the results of a study of Zinc dopant effects on both step structure and ord...
Journal ArticleCuPt ordering is widely observed in GaInP epitaxial layers grown by organometallic va...
Journal ArticlePresents information from an experiment on the step structure and ordering in GalnP. ...
Journal ArticleGa and In atoms in Ga0.52In0.48P layers spontaneously segregate to form alternating I...
Journal ArticleCu-Pt ordering is widely observed in Ga0.5In0.5P layers grown by organometallic vapor...
Journal ArticleThe step structure and CuPt ordering in GaInP layers grown by organometallic vapor ph...
Journal ArticleGae,,In,,P layers have been grown by organometallic vapor phase epitaxy on GaAs subst...
Journal ArticleA natural monolayer 111% superlattice -- the CuPt ordered structure -- is formed spon...
Journal ArticleThe donor Te has been added to GaInP during organometallic vapor phase epitaxial grow...
Journal ArticleEpitaxial layers of Ga,Tn,_,P with 1=0.52 have been grown by-organometallic vapor-pha...
Journal ArticleThe effect of the isoelectronic surfactant Bi on surface structure and ordering has b...
Journal ArticleTransmission electron microscope (TEM) and transmission electron diffraction (TED) st...
Journal ArticleThe surface structure of Ga0.52In0.48P was studied by surface photoabsorption. An abs...
Journal ArticleHeterostructures and quantum wells can be produced in GaInP without changing the soli...
Journal ArticleCompositional ordering has been observed in a wide variety of III/V semiconductor all...
Journal ArticlePresents the results of a study of Zinc dopant effects on both step structure and ord...