Characterization and Modeling of Microwave and Millimetre Wave Active Devices (Karakterisering en modellering van actieve microgolf- en millimetergolfcomponenten)

The rapid growth of electronics and microsystem applications has always stimulated the semiconductor industry to further down-scaling and to develop new architectures for the fundamental devices. As these semiconductor devices, such as transistors, are becoming more and more complex, it is required to provide more reliable, yet simple enough, models for successful and rapid design. The ultimate goal should not only be a powerful technology, which can support the needs of industry and society, but also valid models to decrease the fabrication cost, product-to-market time, and increase the success rate by rapid successful prototyping. As the operating frequency of emerging applications is increasing, more wideband models are required. This work is focused on theoretical and practical model development which can accurately reproduce device behavior at very high frequencies, like mm-wave (30-300 GHz). As the operating frequencies are increasing, the onset of non-quasi-static effects is reached. To account for non-quasi-static effects, we established a theoretical foundation than can support different sources of non-quasi-static effects present at mm-wave frequencies. A small-signal model that can physically support these non-quasi-static effects is proposed. Then the model development, and parameter extraction is demonstrated based on state-of-the-art S-parameters measurements. The so called non-quasi-static-effects play a significant role under large-signal conditions as well. Since the current state-of-the-art models cannot address all the non-quasi-static effects, a technology independent theory and foundation was established to develop a large-signal model from a small-signal model. The extracted models have been verified by state-of-the-art measurements, including both small- and large-signal. Finally, the model implementation in Electronic Design Automation packages was investigated and solutions were demonstrated for some examples of these packages.1 General Introduction 1.1 Semiconductor technologies 1.2 Technology models for device design 1.3 Device models for circuit design 1.4 Current status on device models for circuit design 1.5 Objectives and scope of this work 1.6 Organization of the PhD thesis 2 Advanced Microwave Transistors and Modeling Concept 2.1 Introduction 2.2 SOI Multi-Fin MOSFETs 2.3 SiGe heterojunction bipolar transistor 2.4 Overview of modeling aspects 2.4.1 Linearity and nonlinearity 2.4.2 Quasi-static and non-quasi-static 2.4.3 Memory effects 2.4.3.1 Short-term memory effects 2.4.3.2 Long-term memory effects 2.5 Overview of modeling approaches for transistors 2.5.1 Technology-based physical models 2.5.2 Equivalent-circuit based models 2.5.2.1 Measurement-based models 2.5.2.2 Physics-based models 2.5.3 Behavioral models 2.5.4 Comparison between different models 2.6 Measurements for model extraction 2.6.1 Vector network analyzer 2.6.2 Large-signal network analyzer 2.7 Conclusion 3 Linear Characterization and Modeling of Multi-Fin MOSFETs and Varactors 3.1 Introduction 3.2 Key process information 3.3 Linear model for Multi-Fin MOSFET (FinFET) 3.3.1 Scattering parameters as a black box model 3.3.2 Equivalent-circuit based linear model 3.4 Linear equivalent-circuit based model extraction 3.4.1 Extraction of interconnections 3.4.2 Extraction of extrinsic shell elements 3.4.3 Extraction of intrinsic shell elements 3.5 Linear model for FinFET transistors with kink-effect 3.6 Model implementation in EDA packages 3.6.1 Transmission line implementation 3.6.2 Lumped element implementation 3.7 Linear model for Multi-Fin varactors 3.8 Measurement and data acquisition 3.9 Conclusions 4 Nonlinear Characterization and Modeling of Multi-Fin MOSFETs and Varactors 4.1 Introduction 4.2 De-embedding for large-signal measurements 4.3 Quasi-static nonlinear model for Multi-Fin MOSFET (FinFET)transistors 4.4 Non-quasi-static nonlinear model for Multi-Fin MOSFET (FinFET) transistors 4.5 NQS nonlinear model formulation and generation 4.6 Adapted linear model for large-signal simulations for Multi-Fin MOSFET transistors 4.7 Quasi-static nonlinear model for Multi-Fin varactors 4.8 Implementation of nonlinear models in EDA packages 4.8.1 QS Nonlinear model in ADS 4.8.2 QS Nonlinear model in Cadence 4.8.3 NQSCC nonlinear and ALLS model implementation 4.9 Significance of time-delay in large-signal models 4.10 Conclusions 5 Linear Characterization and Modeling of SiGe Heterojunction Bipolar Transistors 5.1 Introduction 5.2 SiGe HBT DC model extraction 5.3 High frequency linear model for SiGe HBT 5.4 SiGe HBT small-signal model extraction 5.4.1 Extrinsic capacitances extraction 5.4.2 Extrinsic resistances and inductances extraction 5.4.3 Intrinsic shell extraction 5.5 Conclusions 6 General Conclusions Appendix A Appendix B Bibliography List of publications Curriculum vitaenrpages: 220status: publishe