Charakterisierung und Modellierung von metamorphen HEMT Strukturen im Millimeter- und Submillimeter-Wellenlängenbereich

The use of wireless data communication continuously increases and is getting more and more important in our changing and technology related world. Therefore large absolute bandwidth must be provided to enable this increase. One possibility to allo-cate a large absolute bandwidth within wireless communication systems is raising the carrier frequency to far above 30 GHz. This leads to systems working at millimeter (30 GHz 300 GHz) wavelength. A key compo-nent during the development of millimeter wave and submillimeter wave systems are analog monolithic microwave integrated circuits (MMIC) on the basis of a low noise and fast transistor technology. A semiconductor technology that fulfills the given re-quirements is the metamorphic high electron mobility transistor technology (mHEMT) from the Fraunhofer Institute for Applied Solid State Physics (IAF), which shows transit frequencies up to 700 GHz and maximum oscillation frequencies up to 1.2THz. To enable components with such high operating frequencies the dimensions of the components have to be decreased. But with increasing frequency and thereby decreasing wavelength the resulting dimensions reach physical and technological li-mits. The scaling limitation implies that the components to be described are no longer small compared to the wavelength of the signal (lStruktur / < 10). As a result of this, distributed effects along the active and passive structures can be observed and higher order modes can get excited. Both effects cannot be accurately described by using classical compact models. But for a successful circuit design it is essential to rely on accurate model descriptions of the active and passive components. Besides the insufficient model descriptions, the precise and broadband on-wafer component characterization over multiple frequency bands from 50 MHz to 500 GHz presents a major problem. Due to the influences of systematic errors, a consistent anderror-less on-wafer characterization over multiple frequency bands has not been possible to date. Therefore, the overall intent of this work accounts for two areas of interest: Firstly the broadband characterization of the active and passive components over mul-tiple frequency bands and, secondly, the accurate description of their behavior by distributed models. This work investigates new on-wafer calibration methods and structures to reach these goals. For the first time, consistent and precise on-wafer measurements over multiple frequency bands are provided. On the basis of the new on-wafer characterization methods the thesis succeeds for the first time in extracting and verifying a model by highly accurate S-Parameter measurement data up to a frequency of 500 GHz