Vibrational Modes of C_<60> Fullerene Adsorbed on Si(100)2×1 Surface Studied by High-Resolution Electron-Energy-Loss Spectroscopy

We have measured the inelastic electron-energy-loss spectra of C_ on the Si(100)2x1 surface in the infra-red energy range. If C_ is evaporated 5Å (approximately half a monolayer) on Si(100), a strong energy loss peak appears at 65 meV, and weak peaks and shoulders at 72, 144, and 175 meV. In the 12Å thick film, additional weak peaks at 96, 160, and 189 meV become more apparent. Intensities of these peaks are comparable to those of thick films measured by infra-red absorption and by Raman scattering spectroscopies. Moreover, we have measured the angle dependence of the inelastic electron intensity. These results suggest appreciable interactions between C_ and the dangling bonds of Si surface