Comparison of Electrical Characteristics between Bulk MOSFET and Silicon-on-Insulator (SOI) MOSFET

Conventional MOSFET has already passed lower than 45nm transistorfabrication. As silicon is now hitting the atomic resolution and reaching its physical and electrical limitation, producing a proper working transistor tends to be more difficult and complicated. The major challenge is to fabricate a transistor with anominal threshold voltage (VTH), lower gate leakage current (IOFF) and lower drain induced barrier lowering (DIBL). To overcome these problems, Siliconon-insulator (SOI) MOSFET has been proposed, and it is believed to be capable of suppressing short channel effects (SCEs) by burying oxide layer in the silicon substrate. ATHENA and ATLAS module of SILVACO software were used in simulating the virtual fabrication and electrical performance of the transistors. An investigation on the characteristics and performance of the devices has been conducted in order to compare their electrical characteristics. The MOSFETstructure was constructed byutilizingSILVACO Athenamodule,and the electrical characteristicswere simulated using SILVACO Atlas module. The results of boththe conventional bulk MOSFET and the SOI MOSFETwere analyzed. It was observed that SOI MOSFET was superior compared to the conventional MOSFET interms of their overallelectrical characteristic