Add to ORKGNew applications of evanescent imaging for microlithography are introduced. The use of evanescent wave lithography (EWL) has been employed for 26nm resolution at 1.85NA using a 193nm ArF excimer laser wavelength to record images in a photoresist with a refractive index of 1.71. Additionally, a photomask enhancement effect is described using evanescent wave assist features (EWAF) to take advantage of the coupling of the evanescent energy bound at the substrate-absorber surface, enhancing the transmission of a mask opening through coupled interference
AbstractEvanescent light—light that does not propagate but instead decays in intensity over a subwav...
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Mechanical Engineering, 2007.Includes...
The proposed paper investigates the effects of ultra-pure water on DUV photoresist used in 193 nm im...
A near-field technique known as evanescent interferometric lithography allows for high resolution im...
Current assumptions for the limits of immersion optical lithography include NA values at 1.35, large...
Current assumptions for the limits of immersion optical lithography include NA values at 1.35, large...
Concepts of optical resolution limits have been transformed in the past two decades with the develop...
The physical limitations of lithographic imaging are ultimately imposed by the refractive indices of...
A phase-edge contact immersion optical lithography system utilizing a 193nm Argon Fluoride (ArF) exc...
Advances in the semiconductor industry are mainly driven by improvements in optical lithography tech...
Evanescent Wave Assist Features (EWAFs) are features that are sensitive to near-field radiation that...
Lill, H. [Promotor]Oheim, M. [Copromotor]Bald, D. [Copromotor]Emiliani, V. [Copromotor
The evolution of optical lithography to pattern smaller geometries was witnessed the shrinkage of so...
It is possible to extend optical lithography by using immersion imaging methods. Historically, the a...
The physical limitations of lithographic imaging are ultimately imposed by the refractive indices of...
AbstractEvanescent light—light that does not propagate but instead decays in intensity over a subwav...
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Mechanical Engineering, 2007.Includes...
The proposed paper investigates the effects of ultra-pure water on DUV photoresist used in 193 nm im...
A near-field technique known as evanescent interferometric lithography allows for high resolution im...
Current assumptions for the limits of immersion optical lithography include NA values at 1.35, large...
Current assumptions for the limits of immersion optical lithography include NA values at 1.35, large...
Concepts of optical resolution limits have been transformed in the past two decades with the develop...
The physical limitations of lithographic imaging are ultimately imposed by the refractive indices of...
A phase-edge contact immersion optical lithography system utilizing a 193nm Argon Fluoride (ArF) exc...
Advances in the semiconductor industry are mainly driven by improvements in optical lithography tech...
Evanescent Wave Assist Features (EWAFs) are features that are sensitive to near-field radiation that...
Lill, H. [Promotor]Oheim, M. [Copromotor]Bald, D. [Copromotor]Emiliani, V. [Copromotor
The evolution of optical lithography to pattern smaller geometries was witnessed the shrinkage of so...
It is possible to extend optical lithography by using immersion imaging methods. Historically, the a...
The physical limitations of lithographic imaging are ultimately imposed by the refractive indices of...
AbstractEvanescent light—light that does not propagate but instead decays in intensity over a subwav...
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Mechanical Engineering, 2007.Includes...
The proposed paper investigates the effects of ultra-pure water on DUV photoresist used in 193 nm im...