Low resistance ohmic contacts are of extreme importance to modern semiconductor devices. As device sizes continue to shrink, it implies a reduction in the specific contact resistance pc. There are various methods for the measurement of pc, however the Transmission Line Model (TLM) is most popularly used to determine the specific contact resistivity for Integrated Circuits (IC) and Silicon Photovoltaics (PV) applications. Inconsistencies have been observed in literature between IC and PV devices as pc determination may depend on dimensions. Therefore, TLM test geometries need to optimized in order to minimize error. Optimimum values of TLM widths were fabricated and tested and systematic error was compared with that from simulations
Transmission line method (TLM) structures are often employed to extract contact resistivity between ...
Contact test structures where there is more than one non-metal layer, are significantly more complex...
Test structures for the determination of specific contact resistance are an area of continual resear...
Ohmic metal semiconductor contacts are indispensable part of a semiconductor device. These are chara...
The transmission line method (TLM) is often used in characterizing the contact resistance of c-Si so...
The metal resistance in the transmission line model (TLM) structures creates a serious obstacle to d...
Accurate determination of contact resistivities (ρc) below 1 × 10−8 Ohm·cm2 is challenging. Among th...
We propose a very large scale integration compatible, modified transfer length method (TLM) structur...
A modified design of the transmission line model test structure uses the simple calculation of speci...
Reeves's CTLM was reviewed and its scope of application to extract specific contact resistance ...
Though the transport of charge carriers across a metal-semiconductor ohmic interface is a complex pr...
Measuring specific contact resistivity (ρc) in test vehicles representative of the final solar cell ...
Besides surface passivation, a low contact resistivity is one of the most important requirements of ...
Thesis: S.M. in Electrical Engineering, Massachusetts Institute of Technology, Department of Electri...
Abstract — We propose and demonstrate a novel test struc-ture to characterize the electrical propert...
Transmission line method (TLM) structures are often employed to extract contact resistivity between ...
Contact test structures where there is more than one non-metal layer, are significantly more complex...
Test structures for the determination of specific contact resistance are an area of continual resear...
Ohmic metal semiconductor contacts are indispensable part of a semiconductor device. These are chara...
The transmission line method (TLM) is often used in characterizing the contact resistance of c-Si so...
The metal resistance in the transmission line model (TLM) structures creates a serious obstacle to d...
Accurate determination of contact resistivities (ρc) below 1 × 10−8 Ohm·cm2 is challenging. Among th...
We propose a very large scale integration compatible, modified transfer length method (TLM) structur...
A modified design of the transmission line model test structure uses the simple calculation of speci...
Reeves's CTLM was reviewed and its scope of application to extract specific contact resistance ...
Though the transport of charge carriers across a metal-semiconductor ohmic interface is a complex pr...
Measuring specific contact resistivity (ρc) in test vehicles representative of the final solar cell ...
Besides surface passivation, a low contact resistivity is one of the most important requirements of ...
Thesis: S.M. in Electrical Engineering, Massachusetts Institute of Technology, Department of Electri...
Abstract — We propose and demonstrate a novel test struc-ture to characterize the electrical propert...
Transmission line method (TLM) structures are often employed to extract contact resistivity between ...
Contact test structures where there is more than one non-metal layer, are significantly more complex...
Test structures for the determination of specific contact resistance are an area of continual resear...