Add to ORKGA study has been performed to determine critical mechanisms involved in formation of nickel suicides. The process parameters under investigation were silicidation temperature, presilicide N2+ implant, and the presence of a titanium capping layer. Contact sheet resistance phosphorous-implanted silicon was measured and determined to degrade with high silicidation temperature. Titanium capping was found to improve contact resistance and compensate for the effects of high temperature treatment for polycides. The nitrogen incorporation via implant shows a degradation in resistivity for both silicides and polycides
Silicides have been used in CMOS technology for some years mainly to reduce sheet resistance in the ...
Nickel-Platinum silicide integration in CMOS transistors occurs difficulties to control its own form...
This work focuses on the study of Ni- and Ni-alloy silicides to develop a suitable silicidation tech...
Suicides have been used in industry since minimum dimensions reached the 1 ~tm node. The goal of thi...
Suicides have been long used to solve the problem of poly depletion effects in the CMOS circuits. Th...
Continuous advancements in devices, materials and processes have resulted in integrated circuits wit...
A nickel silicidation process has been developed for the Semiconductor & Microsystems Fabrication La...
Metal silicides are used to reduce the polycrystalline silicon (polysilicon) gate and contact resist...
MasterWe investigated the effect of carbon pre-silicidation implant (C-PSI) on electrical characteri...
Le siliciure de Ni(10%Pt) est utilisé pour former les contacts des transistors MOS des nœuds technol...
An improved Ni salicide process has been developed by incorporating nitrogen (N+ 2 ) i...
The key feature of this study is to incorporate N2 + implant prior to Ni sputtering on the poly-Si g...
Metallic silicides have been used as contact materials on source/drain and gate in metal-oxide semic...
Dans le but d’intégrer des technologies CMOS avec des cellules mémoires, une seule étape de siliciur...
As RIT is continuously scaling CMOS technology to smaller dimension, the Self-Aligned Suicide (Salic...
Silicides have been used in CMOS technology for some years mainly to reduce sheet resistance in the ...
Nickel-Platinum silicide integration in CMOS transistors occurs difficulties to control its own form...
This work focuses on the study of Ni- and Ni-alloy silicides to develop a suitable silicidation tech...
Suicides have been used in industry since minimum dimensions reached the 1 ~tm node. The goal of thi...
Suicides have been long used to solve the problem of poly depletion effects in the CMOS circuits. Th...
Continuous advancements in devices, materials and processes have resulted in integrated circuits wit...
A nickel silicidation process has been developed for the Semiconductor & Microsystems Fabrication La...
Metal silicides are used to reduce the polycrystalline silicon (polysilicon) gate and contact resist...
MasterWe investigated the effect of carbon pre-silicidation implant (C-PSI) on electrical characteri...
Le siliciure de Ni(10%Pt) est utilisé pour former les contacts des transistors MOS des nœuds technol...
An improved Ni salicide process has been developed by incorporating nitrogen (N+ 2 ) i...
The key feature of this study is to incorporate N2 + implant prior to Ni sputtering on the poly-Si g...
Metallic silicides have been used as contact materials on source/drain and gate in metal-oxide semic...
Dans le but d’intégrer des technologies CMOS avec des cellules mémoires, une seule étape de siliciur...
As RIT is continuously scaling CMOS technology to smaller dimension, the Self-Aligned Suicide (Salic...
Silicides have been used in CMOS technology for some years mainly to reduce sheet resistance in the ...
Nickel-Platinum silicide integration in CMOS transistors occurs difficulties to control its own form...
This work focuses on the study of Ni- and Ni-alloy silicides to develop a suitable silicidation tech...