Add to ORKGMetallic silicides have been used as contact materials on source/drain and gate in metal-oxide semiconductor (MOS) structure for 40 years. Since the 65 nm technology node, NiSi is the preferred material for contact in microelectronic due to low resistivity, low thermal budget, and low Si consumption. Ni(Pt)Si with 10 at.% Pt is currently employed in recent technologies since Pt allows to stabilize NiSi at high temperature. The presence of Pt and the very low thickness (<10 nm) needed for the device contacts bring new concerns for actual devices. In this work, in situ techniques [X-ray diffraction (XRD), X-ray reflectivity (XRR), sheet resistance, differential scanning calorimetry (DSC)] were combined with atom probe tomography (APT) to stud...
International audienceThe first stages of Ni silicides have been studied by laser assisted atom prob...
International audienceThe first stages of Ni silicides have been studied by laser assisted atom prob...
Metal silicides are used to reduce the polycrystalline silicon (polysilicon) gate and contact resist...
The objective of this study is to characterize the redistribution of alloys elements and of dopants ...
International audienceThe NiSi silicide that forms by reactive diffusion between Ni and Si active re...
International audienceThe NiSi silicide that forms by reactive diffusion between Ni and Si active re...
International audienceThe NiSi silicide that forms by reactive diffusion between Ni and Si active re...
International audienceThe NiSi silicide that forms by reactive diffusion between Ni and Si active re...
International audienceThe NiSi silicide that forms by reactive diffusion between Ni and Si active re...
Ni(10 at.% Pt) monosilicide is used as contact in microelectronics but suffers from degradation at r...
Ni(10 at.% Pt) monosilicide is used as contact in microelectronics but suffers from degradation at r...
© 2018 Author(s). The electrical contact of the source and drain regions in state-of-the-art CMOS tr...
24th Workshop on Materials for Advanced Metallization held Jointly with the International Interconne...
The early formation of NiSi2 has been observed during the solid state reaction between Ni(W,Pt) film...
International audienceThe first stages of Ni silicides have been studied by laser assisted atom prob...
International audienceThe first stages of Ni silicides have been studied by laser assisted atom prob...
International audienceThe first stages of Ni silicides have been studied by laser assisted atom prob...
Metal silicides are used to reduce the polycrystalline silicon (polysilicon) gate and contact resist...
The objective of this study is to characterize the redistribution of alloys elements and of dopants ...
International audienceThe NiSi silicide that forms by reactive diffusion between Ni and Si active re...
International audienceThe NiSi silicide that forms by reactive diffusion between Ni and Si active re...
International audienceThe NiSi silicide that forms by reactive diffusion between Ni and Si active re...
International audienceThe NiSi silicide that forms by reactive diffusion between Ni and Si active re...
International audienceThe NiSi silicide that forms by reactive diffusion between Ni and Si active re...
Ni(10 at.% Pt) monosilicide is used as contact in microelectronics but suffers from degradation at r...
Ni(10 at.% Pt) monosilicide is used as contact in microelectronics but suffers from degradation at r...
© 2018 Author(s). The electrical contact of the source and drain regions in state-of-the-art CMOS tr...
24th Workshop on Materials for Advanced Metallization held Jointly with the International Interconne...
The early formation of NiSi2 has been observed during the solid state reaction between Ni(W,Pt) film...
International audienceThe first stages of Ni silicides have been studied by laser assisted atom prob...
International audienceThe first stages of Ni silicides have been studied by laser assisted atom prob...
International audienceThe first stages of Ni silicides have been studied by laser assisted atom prob...
Metal silicides are used to reduce the polycrystalline silicon (polysilicon) gate and contact resist...