Surface morphology of a-CSi:H films prepared from tetravinylsilane in low-temperature plasma

This bachelor thesis is focused on the surface morphology of a-CSi:H films. Films were prepared by plasma-enhanced chemical vapor deposition (PECVD) on silicon wafers using plasma discharge. Tetravinylsilane (TVS) precursor was used for deposition. The set of samples deposited at different effective power (2-150 W) and a thickness of about 0.6 µm was characterized to investigate their surface properties. Atomic force microscopy was used for characterization of surface morphology. Obtained results were used for evaluation of surface roughness and assessment of the effect of the film growth dynamics on the surface topography