none6Large-signal measurement systems based on high-frequency sinusoidal excitations have been widely exploited by the microwave community for the characterization of transistors under nonlinear operation. However, device characterization at high-frequencies necessarily involves the application of rather complex calibration procedures of the measurement setup. In addition, reactive effects associated with the device extrinsic parasitic effects tend to become more important at high-frequencies. Thus, uncertainties in the identification of the parasitic network components may leads in this case to critical errors in the identification of the intrinsic device behavior and in particular, of the drain current source. In order to overcome these p...
Low-frequency (LF) dispersive phenomena due to device self-heating and/or the presence of "traps" (i...
Low-frequency dispersive phenomena due to self-heating and/or traps (that is, surface-state densitie...
In this paper, we present a new dynamic-bias measurement setup and its application to the extraction...
Large-signal measurement systems based on high-frequency sinusoidal excitations have been widely exp...
Abstract- Large-signal measurement systems based on high-frequency sinusoidal excitations have been ...
none6When dealing with microwave electron device modeling, robust device characterization typically ...
The I-V dynamic characteristics of field-effect-transistors (FET) are determined through a nonlinear...
Large-signal dynamic modelling of 111-V FETs cannot he simply based on DC i/v characteristics, when...
Large-signal dynamic modelling of 111-V FETs cannot he simply based on DC i/v characteristics, when...
Low-frequency (LF) dispersive phenomena due to device self-heating and/or the presence of "traps" (i...
Measurements of low- and high-frequency vector-calibrated large-signal waveforms are exploited in th...
Large-signal dynamic modelling of III-V FETs cannot be simply based on DC i/v characteristics, when...
A large-signal measurement setup with sinusoidal excitation is used for the characterization of low-...
Large-signal dynamic modelling of III-V FETs cannot be simply based on DC i/v characteristics when ...
Low-frequency dispersive phenomena due to self-heating and/or “traps” (that is, surface-state densit...
Low-frequency (LF) dispersive phenomena due to device self-heating and/or the presence of "traps" (i...
Low-frequency dispersive phenomena due to self-heating and/or traps (that is, surface-state densitie...
In this paper, we present a new dynamic-bias measurement setup and its application to the extraction...
Large-signal measurement systems based on high-frequency sinusoidal excitations have been widely exp...
Abstract- Large-signal measurement systems based on high-frequency sinusoidal excitations have been ...
none6When dealing with microwave electron device modeling, robust device characterization typically ...
The I-V dynamic characteristics of field-effect-transistors (FET) are determined through a nonlinear...
Large-signal dynamic modelling of 111-V FETs cannot he simply based on DC i/v characteristics, when...
Large-signal dynamic modelling of 111-V FETs cannot he simply based on DC i/v characteristics, when...
Low-frequency (LF) dispersive phenomena due to device self-heating and/or the presence of "traps" (i...
Measurements of low- and high-frequency vector-calibrated large-signal waveforms are exploited in th...
Large-signal dynamic modelling of III-V FETs cannot be simply based on DC i/v characteristics, when...
A large-signal measurement setup with sinusoidal excitation is used for the characterization of low-...
Large-signal dynamic modelling of III-V FETs cannot be simply based on DC i/v characteristics when ...
Low-frequency dispersive phenomena due to self-heating and/or “traps” (that is, surface-state densit...
Low-frequency (LF) dispersive phenomena due to device self-heating and/or the presence of "traps" (i...
Low-frequency dispersive phenomena due to self-heating and/or traps (that is, surface-state densitie...
In this paper, we present a new dynamic-bias measurement setup and its application to the extraction...