Add to ORKGLow‐threshold GaAs‐GaAlAs lasers operating in a stable single mode have been fabricated using laterally diffused junctions. The lasers are fabricated on semi‐insulating substrates and can be integrated with other components
Constricted double-heterojunction (CDH) lasers are presented as the class of single-mode nonplanar-s...
Very low threshold currents InGaAsP/InP terrace mesa (T-ME) lasers with an unpassivated surface have...
Recent studies on the GaAs injection laser have indicated certain problems associated with the local...
GaAs‐GaAlAs double‐heterostructure lasers were fabricated on semi‐insulating substrates. Laser actio...
Low threshold current GaInAsP/InP groove lasers have been fabricated on semi-insulating InP substrat...
Three subjects related to epitaxial GaAs-GaAlAs optoelectronic devices are discussed in this thesis...
Be implanted stripe geometry double heterostructure lasers have been fabricated on a semi-insulating...
Gain guided AlGaAs lasers in which the current is restricted to flow between two narrow stripes have...
grantor: University of TorontoThe theory of the lateral current injection (LCI) laser is d...
The optical properties of GaAs make it a very useful material for the fabrication of optical emitter...
A GaAs-GaAlAs injection laser has been tested that confines light in the lateral dimension (normal t...
Inverted strip buried heterostructure lasers have been fabricated. These lasers have threshold curre...
The vertical integration of two GaAs-based lasers operating at different wavelengths has been achiev...
GaAs-GaAlAs double-heterostructure distributed-feedback injection lasers are investigated at tempera...
The mode stabilization behavior of the buried active waveguide with lateral diffused junction is the...
Constricted double-heterojunction (CDH) lasers are presented as the class of single-mode nonplanar-s...
Very low threshold currents InGaAsP/InP terrace mesa (T-ME) lasers with an unpassivated surface have...
Recent studies on the GaAs injection laser have indicated certain problems associated with the local...
GaAs‐GaAlAs double‐heterostructure lasers were fabricated on semi‐insulating substrates. Laser actio...
Low threshold current GaInAsP/InP groove lasers have been fabricated on semi-insulating InP substrat...
Three subjects related to epitaxial GaAs-GaAlAs optoelectronic devices are discussed in this thesis...
Be implanted stripe geometry double heterostructure lasers have been fabricated on a semi-insulating...
Gain guided AlGaAs lasers in which the current is restricted to flow between two narrow stripes have...
grantor: University of TorontoThe theory of the lateral current injection (LCI) laser is d...
The optical properties of GaAs make it a very useful material for the fabrication of optical emitter...
A GaAs-GaAlAs injection laser has been tested that confines light in the lateral dimension (normal t...
Inverted strip buried heterostructure lasers have been fabricated. These lasers have threshold curre...
The vertical integration of two GaAs-based lasers operating at different wavelengths has been achiev...
GaAs-GaAlAs double-heterostructure distributed-feedback injection lasers are investigated at tempera...
The mode stabilization behavior of the buried active waveguide with lateral diffused junction is the...
Constricted double-heterojunction (CDH) lasers are presented as the class of single-mode nonplanar-s...
Very low threshold currents InGaAsP/InP terrace mesa (T-ME) lasers with an unpassivated surface have...
Recent studies on the GaAs injection laser have indicated certain problems associated with the local...