Ion mixing of elemental 4d-5d metallic bilayers at 77 K by 600 keV Xe + + ions has been studied to test the validity of the phenomenological model of ion mixing that predicts a dependence on the chemical heats of mixing, DeltaHmix, and on the cohesive energies, DeltaHcoh, of the bilayer elements. A series of samples was chosen to minimize the variation in kinematical properties between samples while maximizing the variation in heats of mixing. The experimental results agree well with the model's predictions, and the experimentally determined constants K1=0.034 Å and K2=27 agree with those of previous work
The amount of atomic mixing in amorphous SiO2 and Si is studied by measuring the redistribution of t...
The mixing of Pt and Si marker atoms in Ge during 750-keV Xe irradiation was measured at temperature...
We have characterized the interaction of isotropic and anisotropic atomic transport mechanisms in th...
We have compared the mixing rate of several 5d-4d metal bilayers which form ideal solutions. We obse...
The effective interdiffusion coefficient of metallic bilayers under ion irradiation has been correla...
There has been a great deal of interest in the fabrication of new materials with unique properties u...
Instruments & InstrumentationNuclear Science & TechnologyPhysics, Atomic, Molecular &...
on-beam mixing was measured in immiscible Cu bilayer systems after Kr irradiation at 6 K and at 295...
Charge-state equilibration of ions moving in matter occurs within femtoseconds and when penetrating ...
A correlation between the cohesive energy of elemental solids and the characteristic temperature Tc ...
Ion beam mixing during 750 keV Kr+ irradiation at 80 K was measured on a series of Ag‐Pd alloys usin...
Ion mixing of Cu/Ti and Cu/Fe bilayers / B. Rauschenbach ... - In: Nuclear instruments & methods in ...
Ion beam mixing of Au markers in Cu samples was measured after 500-keV Kr irradiation at 6, 80, and...
Very thin films of Ni, Ta, W, Pb, and Bi in a Ag matrix were irradiated at 77 K with 330 keV Kr ions...
Ion mixing of semiconductor layered structures has been found to exhibit a thermally activated regim...
The amount of atomic mixing in amorphous SiO2 and Si is studied by measuring the redistribution of t...
The mixing of Pt and Si marker atoms in Ge during 750-keV Xe irradiation was measured at temperature...
We have characterized the interaction of isotropic and anisotropic atomic transport mechanisms in th...
We have compared the mixing rate of several 5d-4d metal bilayers which form ideal solutions. We obse...
The effective interdiffusion coefficient of metallic bilayers under ion irradiation has been correla...
There has been a great deal of interest in the fabrication of new materials with unique properties u...
Instruments & InstrumentationNuclear Science & TechnologyPhysics, Atomic, Molecular &...
on-beam mixing was measured in immiscible Cu bilayer systems after Kr irradiation at 6 K and at 295...
Charge-state equilibration of ions moving in matter occurs within femtoseconds and when penetrating ...
A correlation between the cohesive energy of elemental solids and the characteristic temperature Tc ...
Ion beam mixing during 750 keV Kr+ irradiation at 80 K was measured on a series of Ag‐Pd alloys usin...
Ion mixing of Cu/Ti and Cu/Fe bilayers / B. Rauschenbach ... - In: Nuclear instruments & methods in ...
Ion beam mixing of Au markers in Cu samples was measured after 500-keV Kr irradiation at 6, 80, and...
Very thin films of Ni, Ta, W, Pb, and Bi in a Ag matrix were irradiated at 77 K with 330 keV Kr ions...
Ion mixing of semiconductor layered structures has been found to exhibit a thermally activated regim...
The amount of atomic mixing in amorphous SiO2 and Si is studied by measuring the redistribution of t...
The mixing of Pt and Si marker atoms in Ge during 750-keV Xe irradiation was measured at temperature...
We have characterized the interaction of isotropic and anisotropic atomic transport mechanisms in th...