Very thin films of Ni, Ta, W, Pb, and Bi in a Ag matrix were irradiated at 77 K with 330 keV Kr ions at doses from 3 to 7×10^15 ions/cm^2 and analyzed at room temperature by backscattering of 1.9 MeV He + . The measured mixing efficiencies, Dt/phiFD, for the various tracers correlate with their respective tracer impurity diffusion coefficients and impurity-vacancy binding energies in Ag. The results concur with previous ones with a Cu matrix and further support the idea that the parameters that are important for thermal diffusion are also important for ion mixing in a thermal spike
The mixing of Pt and Si marker atoms in Ge during 750-keV Xe irradiation was measured at temperature...
The effective interdiffusion coefficient of metallic bilayers under ion irradiation has been correla...
Swift heavy ion induced mixing is reported in a-Si/Mn/a-Si thin films on a silicon wafer, when irrad...
A systematic study of ion-beam mixing of tracer impurities in thin metal films at low temperatures...
A systematic study of ion-beam mixing of tracer impurities in thin metal films at low temperatures h...
Ion beam mixing of Au markers in Cu samples was measured after 500-keV Kr irradiation at 6, 80, and...
Ion beam mixing during 750 keV Kr+ irradiation at 80 K was measured on a series of Ag‐Pd alloys usin...
The mixing mechanism of thin layers of Au, Pt or W embedded in silica when irradiated with 4.5 MeV ...
The amount of atomic mixing in amorphous SiO2 and Si is studied by measuring the redistribution of t...
Tracer diffusivities provide the most fundamental information on diffusion in materials, and are the...
Tracer diffusivities provide the most fundamental information on diffusion in materials, and are the...
Tracer diffusivities provide the most fundamental information on diffusion in materials, and are the...
Crystalline and preamorphized isotope multilayers are utilized to investigate the dependence of ion ...
Crystalline and preamorphized isotope multilayers are utilized to investigate the dependence of ion ...
The mechanisms of atomic transport induced by ion irradiation generally fall into the categories of ...
The mixing of Pt and Si marker atoms in Ge during 750-keV Xe irradiation was measured at temperature...
The effective interdiffusion coefficient of metallic bilayers under ion irradiation has been correla...
Swift heavy ion induced mixing is reported in a-Si/Mn/a-Si thin films on a silicon wafer, when irrad...
A systematic study of ion-beam mixing of tracer impurities in thin metal films at low temperatures...
A systematic study of ion-beam mixing of tracer impurities in thin metal films at low temperatures h...
Ion beam mixing of Au markers in Cu samples was measured after 500-keV Kr irradiation at 6, 80, and...
Ion beam mixing during 750 keV Kr+ irradiation at 80 K was measured on a series of Ag‐Pd alloys usin...
The mixing mechanism of thin layers of Au, Pt or W embedded in silica when irradiated with 4.5 MeV ...
The amount of atomic mixing in amorphous SiO2 and Si is studied by measuring the redistribution of t...
Tracer diffusivities provide the most fundamental information on diffusion in materials, and are the...
Tracer diffusivities provide the most fundamental information on diffusion in materials, and are the...
Tracer diffusivities provide the most fundamental information on diffusion in materials, and are the...
Crystalline and preamorphized isotope multilayers are utilized to investigate the dependence of ion ...
Crystalline and preamorphized isotope multilayers are utilized to investigate the dependence of ion ...
The mechanisms of atomic transport induced by ion irradiation generally fall into the categories of ...
The mixing of Pt and Si marker atoms in Ge during 750-keV Xe irradiation was measured at temperature...
The effective interdiffusion coefficient of metallic bilayers under ion irradiation has been correla...
Swift heavy ion induced mixing is reported in a-Si/Mn/a-Si thin films on a silicon wafer, when irrad...