DOIAbstract
Four Al0.52In0.48P p+-i-n+ mesa photodiodes with 6 μm thick i layers and two different diameters (217 μm ± 15 μm and 409 μm ± 28 μm) were studied at room temperature (24 °C). Electrical characterisation measurements are reported along with measurements showing the performance of the devices as x-ray detectors. The devices exhibited leakage currents <3 pA (corresponding to leakage current densities <2 nA cm−2) at 100 V reverse bias (electric field strength of 167 kV cm−1). The photodiodes were coupled to a custom-made low-noise charge-sensitive preamplifier, the noise characteristics of the resultant spectrometers were investigated as functions of shaping times. The best energy resolutions (full width at half maximum of the 5.9 keV pho...
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