Optical investigation of the two-dimensional hole energy spectrum in GaAs/AlxGa1-xAs heterojunctions

We present the results of optical studies on the energy spectrum of a two-dimensional hole gas (2DHG) in a GaAs/AlxGa1-xAs structure. The photoluminescence (PL) line shape in the 2DHG is investigated as a function of temperature by heating the holes by a current flow through the 2D hole channel. The line shape of the PL from the 2DHG as a function of temperature is calculated by taking into account the real band structure and the hole-hole final-state interaction. By comparing experiment and theory, it is found that the special features of the band structure predicted theoretically explain the experimental data