Temperature dependence of photoluminescence in GaAs/AlGaAs asymmetric coupled double quantum wells structure

Photoluminescence spectra of GaAS/AlGaAs asymmetric coupled double quantum wells pin structure were measured at various temperatures. Different temperature dependence of heavy-hole excitonic peaks intensity in narrow and wide well was observed. The results showed that the thermionic emission of the electrons in the narrow well results in more rapid decreasing of the luminescence intensity. The special temperature dependence of light-hole excitonic peaks intensity in the wide well and its mechanism were studied as well.link_to_subscribed_fulltex