Nanoholes, drilled in the (001) surface of AlGaAs by local Al droplet etching, are shown to consist of faceted inner walls. The most prominent facets of the inverted pyramidlike nano-sized etch pits are the {111}A and {1$\bar{1}$1}B surfaces, which differ in their atomic surface terminations. In the [110] direction, the {111} facets change to {112} and/or {113}, which are both stepped surfaces with (111)A terraces. Etching-temperature-dependent data indicate that this facet transition seems kinetically hindered up to etch temperatures above 660 °C, at which point the walls along [1$\bar{1}$0] have already evolved completely towards {1$\bar{1}$1}B facets. The redeposited ring material outside the nanohole develops facets with indices of (115...
We show that Au nanoparticles spontaneously move across the (001) surface of InP, InAs, and GaP when...
The shape evolution of epitaxially grown InAs/GaAs(001) quantum dots after the controlled removal of...
<font face="times new roman,times" size="2">We in-detail investigated the profile evolution processe...
We describe a method to control the shape of nanoholes in GaAs (001) which combines the technique of...
We demonstrate nanohole formation in AlGaSb by Ga droplet etching within a temperature range from 27...
Local droplet etching (LDE) utilizes metal droplets during molecular beam epitaxy for the self-assem...
Abstract In this work, we study metal droplets on a semiconductor surface that are the initial stage...
Etching is an essential tool for the creation of nanostructures, where patterned metal structures ca...
We report the fabrication of nanoholes on silicon surface by exploiting the solubility of silicon in...
Nanoholes integrated into microfluidic systems have been widely researched, due to their practical a...
Using atomic force microscopy and spot-profile analyzing low energy electron diffraction, we have ob...
International audienceA new method for obtaining InGaAs nanodomains on the surface of GaAs or (Al,Ga...
We present a detailed atomic-resolution study of morphology and substrate etching mechanism in InAs/...
Selective area thermal etching (SATE) of gallium nitride is a simple subtractive process for creatin...
GaAs quantum dots (QDs) grown by local droplet etching (LDE) have been studied extensively in recent...
We show that Au nanoparticles spontaneously move across the (001) surface of InP, InAs, and GaP when...
The shape evolution of epitaxially grown InAs/GaAs(001) quantum dots after the controlled removal of...
<font face="times new roman,times" size="2">We in-detail investigated the profile evolution processe...
We describe a method to control the shape of nanoholes in GaAs (001) which combines the technique of...
We demonstrate nanohole formation in AlGaSb by Ga droplet etching within a temperature range from 27...
Local droplet etching (LDE) utilizes metal droplets during molecular beam epitaxy for the self-assem...
Abstract In this work, we study metal droplets on a semiconductor surface that are the initial stage...
Etching is an essential tool for the creation of nanostructures, where patterned metal structures ca...
We report the fabrication of nanoholes on silicon surface by exploiting the solubility of silicon in...
Nanoholes integrated into microfluidic systems have been widely researched, due to their practical a...
Using atomic force microscopy and spot-profile analyzing low energy electron diffraction, we have ob...
International audienceA new method for obtaining InGaAs nanodomains on the surface of GaAs or (Al,Ga...
We present a detailed atomic-resolution study of morphology and substrate etching mechanism in InAs/...
Selective area thermal etching (SATE) of gallium nitride is a simple subtractive process for creatin...
GaAs quantum dots (QDs) grown by local droplet etching (LDE) have been studied extensively in recent...
We show that Au nanoparticles spontaneously move across the (001) surface of InP, InAs, and GaP when...
The shape evolution of epitaxially grown InAs/GaAs(001) quantum dots after the controlled removal of...
<font face="times new roman,times" size="2">We in-detail investigated the profile evolution processe...