Local droplet etching on InAlAs/InP surfaces with InAl droplets
- Cao, Xin
- Zhang, Yiteng
- Ma, Chenxi
- Wang, Yinan
- Brechtken, Benedikt
- Haug, Rolf J.
- Rugeramigabo, Eddy P.
- Zopf, Michael
- Ding, Fei
DOIAbstract
GaAs quantum dots (QDs) grown by local droplet etching (LDE) have been studied extensively in recent years. The LDE method allows for high crystallinity, as well as precise control of the density, morphology, and size of QDs. These properties make GaAs QDs an ideal candidate as single photon and entangled photon sources at short wavelengths (<800 nm). For technologically important telecom wavelengths, however, it is still unclear whether LDE grown QDs can be realized. Controlling the growth conditions does not enable shifting the wavelength of GaAs QDs to the telecom region. New recipes will have to be established. In this work, we study Indium–Aluminum (InAl) droplet etching on ultra-smooth In0.55Al0.45As surfaces on InP substrates, with a...
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