Add to ORKGWe propose and fabricate an A1GaN/GaN high electron mobility transistor （HEMT） on sapphire substrate using a new kind of electron beam （EB） lithography layout for the T-gate. Using this new layout,we can change the aspect ratio （ratio of top gate dimension to gate length） and modify the shape of the T-gate freely. Therefore, we obtain a 0.18μm gate-length AlGaN/GaN HEMT with a unity current gain cutoff frequency （f_T） of 65GHz. The aspect ratio of the T-gate is 10. These single finger devices also exhibit a peak extrinsic transconductance of 287mS/mm and a maximum drain current as high as 980mA/mm
Low defect AlN/GaN high electron mobility transistor (HEMT) structures, with very high values of ele...
We developed a novel double-level-T-gate technology based on wet etching of a metal gate interlayer....
We developed a novel double-level-T-gate technology based on wet etching of a metal gate interlayer....
AlGaN/GaN high electron mobility transistor (HEMT) structures were grown on 2 inch sapphire substrat...
In this paper, the lower-than-expected frequency performance observed in many AlGaN/GaN high electro...
AlGaN/GaN high electron mobility transistors(HEMTs) with high performance were fabricated and charac...
We developed a T-gate technology based on selective wet etching yielding 200 nm wide T-gate structur...
We developed a T-gate technology based on selective wet etching yielding 200 nm wide T-gate structur...
Abstract This article reports a high throughput 150‐nm‐gate AlGaN/GaN high electron mobility transis...
Low defect AlN/GaN high electron mobility transistor (HEMT) structures, with very high values of ele...
We developed a novel double-level-T-gate technology based on wet etching of a metal gate interlayer....
AlInN/GaN unpassivated High Electron Mobility Transistor (HEMT) on Sapphire substrate has yielded a ...
peer reviewedWe developed a T-gate technology based on selective wet etching yielding 200 nm wide T-...
Low defect AlN/GaN high electron mobility transistor (HEMT) structures, with very high values of ele...
We developed a novel double-level-T-gate technology based on wet etching of a metal gate interlayer....
Low defect AlN/GaN high electron mobility transistor (HEMT) structures, with very high values of ele...
We developed a novel double-level-T-gate technology based on wet etching of a metal gate interlayer....
We developed a novel double-level-T-gate technology based on wet etching of a metal gate interlayer....
AlGaN/GaN high electron mobility transistor (HEMT) structures were grown on 2 inch sapphire substrat...
In this paper, the lower-than-expected frequency performance observed in many AlGaN/GaN high electro...
AlGaN/GaN high electron mobility transistors(HEMTs) with high performance were fabricated and charac...
We developed a T-gate technology based on selective wet etching yielding 200 nm wide T-gate structur...
We developed a T-gate technology based on selective wet etching yielding 200 nm wide T-gate structur...
Abstract This article reports a high throughput 150‐nm‐gate AlGaN/GaN high electron mobility transis...
Low defect AlN/GaN high electron mobility transistor (HEMT) structures, with very high values of ele...
We developed a novel double-level-T-gate technology based on wet etching of a metal gate interlayer....
AlInN/GaN unpassivated High Electron Mobility Transistor (HEMT) on Sapphire substrate has yielded a ...
peer reviewedWe developed a T-gate technology based on selective wet etching yielding 200 nm wide T-...
Low defect AlN/GaN high electron mobility transistor (HEMT) structures, with very high values of ele...
We developed a novel double-level-T-gate technology based on wet etching of a metal gate interlayer....
Low defect AlN/GaN high electron mobility transistor (HEMT) structures, with very high values of ele...
We developed a novel double-level-T-gate technology based on wet etching of a metal gate interlayer....
We developed a novel double-level-T-gate technology based on wet etching of a metal gate interlayer....