Understanding RRAM endurance, retention and window margin trade-off using experimental results and simulations
- Nail, C.
- Molas, G.
- Blaise, P.
- Piccolboni, G.
- Sklenard, B.
- Cagli, C.
- Bernard, M.
- Roule, A.
- Azzaz, M.
- Vianello, E.
- Carabasse, C.
- Berthier, R.
- Cooper, D.
- Pélissier, C.
- Magis, T.
- Ghibaudo, G.
- Vallée, Corentin
- Bedeau, D.
- Mosendz, O.
- de Salvo, B.
- Perniola, L.
Publication date
December 2016
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE)Abstract
International audienceIn this paper we clarify for the first time the correlation between endurance, window margin and retention of Resistive RAM. To this aim, various classes of RRAM (OXRAM and CBRAM) are investigated, showing high window margin up to 10 10 cycles or high 300°C retention. From first principle calculations, we analyze the conducting filament composition for the various RRAM technologies, and extract the key filament features. We then propose an analytical model to calculate the dependence between endurance, window margin and retention, linking material parameters to memory characteristics
Add to ORKG