Characterization of 2DEG in AlGaN/GaN heterostructure by Hall effect

International audienceThis paper presents a detailed characterization of 2D Electron Gas in AlGaN/AlN/GaN heterostructure by Hall Effect. For this purpose, we have developed a new experimental set-up to carry out Hall Effect measurements on an entire 200/300 mm wafer (rather than a small sample) using a new probe system including a permanent magnet. The measurement technique used in this work allows an accurate determination of the carrier concentration and mobility. One of the main issues of this experiment is the determination of the intensity of magnetic induction field (B) applied by the permanent magnet on the top side of the wafer. We first present our methodology for the determination of the magnetic field B. After the validation of the experimental set-up, the electrical characterization results for fully and partially processed GaN-on-Si wafers are presented