Light induced degradation in hydrogenated amorphous silicon (a-Si:H)

Includes bibliographical references (leaves 73-77).Light induced degradation in the microstructure and optical properties of a series of hydrogenated amorphous silicon (a-Si:H) layers, deposited by hot wire chemical vapour deposition system (HWCVD) on glass and silicon substrates at different temperatures ranging from 250Light induced degradation in the microstructure and optical properties of a series of hydrogenated amorphous silicon (a-Si:H) layers, deposited by hot wire chemical vapour deposition system (HWCVD) on glass and silicon substrates at different temperatures ranging from 250°C to 500°C are investigated. Light soaking experiments were carried out using a mirrored chamber with a metal halide lamp