Add to ORKGRecently there has been considerable interest in the pressure dependence of barrier heights of metal (Schottky) contacts /1/ and electrolyte interfaces /2,3/ with compound semiconductors. It has been shown that the pressure dependence of the barrier heights reflects the electronic structure and the ionic nature of the semiconductor under study. In this note, we report the results of a study of the pressure dependence of I-U characteristics of Schottky barriers on both n- and p-type silicon
Au/n-GaAs Schottky barrier diodes SBDs have been fabricated. Schottky diode parameters such as the i...
Au/n-GaAs Schottky barrier diodes SBDs have been fabricated. Schottky diode parameters such as the i...
Investigation and understanding of Schottky diodes continue to be interesting both for basic as well...
Recently there has been considerable interest in the pressure dependence of barrier heights of metal...
119 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1985.This thesis contains the firs...
119 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1985.This thesis contains the firs...
The authors have calculated the pressure coefficients of the silicon band gap and the Schottky barri...
The authors have calculated the pressure coefficients of the silicon band gap and the Schottky barri...
The authors have calculated the pressure coefficients of the silicon band gap and the Schottky barri...
The influence of hydrostatic pressure up to 8 kbar on the barrier height of epitaxially MBE-grown Al...
Abstract-By reconsidering the effect of the penetration depth of the interface states, a new analyti...
Investigation and understanding of Schottky diodes continue to be interesting both for basic as well...
In order to understand the variation of the barrier height of different metal-semiconductor contacts...
The evolution of barrier at Schottky contact and its stabilization to value characterized by the bar...
Au/n-GaAs Schottky barrier diodes SBDs have been fabricated. Schottky diode parameters such as the i...
Au/n-GaAs Schottky barrier diodes SBDs have been fabricated. Schottky diode parameters such as the i...
Au/n-GaAs Schottky barrier diodes SBDs have been fabricated. Schottky diode parameters such as the i...
Investigation and understanding of Schottky diodes continue to be interesting both for basic as well...
Recently there has been considerable interest in the pressure dependence of barrier heights of metal...
119 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1985.This thesis contains the firs...
119 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1985.This thesis contains the firs...
The authors have calculated the pressure coefficients of the silicon band gap and the Schottky barri...
The authors have calculated the pressure coefficients of the silicon band gap and the Schottky barri...
The authors have calculated the pressure coefficients of the silicon band gap and the Schottky barri...
The influence of hydrostatic pressure up to 8 kbar on the barrier height of epitaxially MBE-grown Al...
Abstract-By reconsidering the effect of the penetration depth of the interface states, a new analyti...
Investigation and understanding of Schottky diodes continue to be interesting both for basic as well...
In order to understand the variation of the barrier height of different metal-semiconductor contacts...
The evolution of barrier at Schottky contact and its stabilization to value characterized by the bar...
Au/n-GaAs Schottky barrier diodes SBDs have been fabricated. Schottky diode parameters such as the i...
Au/n-GaAs Schottky barrier diodes SBDs have been fabricated. Schottky diode parameters such as the i...
Au/n-GaAs Schottky barrier diodes SBDs have been fabricated. Schottky diode parameters such as the i...
Investigation and understanding of Schottky diodes continue to be interesting both for basic as well...