We have generated, using an ab initio pseudopotential method and the Bardeen transfer Hamiltonian ap...
The electronic properties of shallow acceptors in p-doped GaAs{110} are investigated with scanning t...
Cross-sectional scanning tunneling microscopy (STM) measurements on molecular beam epitaxy grown Mn ...
Effects of individual dopant atoms on the electronic properties of GaAs investigated by scanning tun...
The GaAs(112)A and B surfaces were prepared by molecular beam epitaxy (MBE) and characterized in sit...
[[abstract]]Reflection electron microscopy (REM) has been applied to studying the (110) cleavage pla...
In situ cleaved (110) surfaces of n-doped GaAs have been investigated by scanning tunneling microsc...
[[abstract]]We report direct observation of individual dopant impurities (Si-Ga in GaAs, S-As in InA...
Low-temperature scanning tunneling spectroscopy measurements on semiconductor surface are described....
Epitaxial layers grown by molecular beam epitaxy on both silicon and gallium arsenide substrates are...
We identify surface anion antisite defects in (110) surfaces of GaAs, GaP, and InP using scanning tu...
We have examined passivated and unpassivated GaAs (110) surfaces under ambient conditions with Scann...
Atomically resolved, voltage-dependent scanning tunneling microscopy (STM) images of GaAs(110) are c...
Scanning tunneling spectroscopy is used to study n-type GaAs(110) surfaces at temperatures near 10 K...
Theoretical scanning tunneling microscopy (STM) images for all group-III and -V dopants on the GaAs ...
We have generated, using an ab initio pseudopotential method and the Bardeen transfer Hamiltonian ap...
The electronic properties of shallow acceptors in p-doped GaAs{110} are investigated with scanning t...
Cross-sectional scanning tunneling microscopy (STM) measurements on molecular beam epitaxy grown Mn ...
Effects of individual dopant atoms on the electronic properties of GaAs investigated by scanning tun...
The GaAs(112)A and B surfaces were prepared by molecular beam epitaxy (MBE) and characterized in sit...
[[abstract]]Reflection electron microscopy (REM) has been applied to studying the (110) cleavage pla...
In situ cleaved (110) surfaces of n-doped GaAs have been investigated by scanning tunneling microsc...
[[abstract]]We report direct observation of individual dopant impurities (Si-Ga in GaAs, S-As in InA...
Low-temperature scanning tunneling spectroscopy measurements on semiconductor surface are described....
Epitaxial layers grown by molecular beam epitaxy on both silicon and gallium arsenide substrates are...
We identify surface anion antisite defects in (110) surfaces of GaAs, GaP, and InP using scanning tu...
We have examined passivated and unpassivated GaAs (110) surfaces under ambient conditions with Scann...
Atomically resolved, voltage-dependent scanning tunneling microscopy (STM) images of GaAs(110) are c...
Scanning tunneling spectroscopy is used to study n-type GaAs(110) surfaces at temperatures near 10 K...
Theoretical scanning tunneling microscopy (STM) images for all group-III and -V dopants on the GaAs ...
We have generated, using an ab initio pseudopotential method and the Bardeen transfer Hamiltonian ap...
The electronic properties of shallow acceptors in p-doped GaAs{110} are investigated with scanning t...
Cross-sectional scanning tunneling microscopy (STM) measurements on molecular beam epitaxy grown Mn ...