Atomic and Other Structures of Cleaved GaAs(110) Surfaces

[[abstract]]Reflection electron microscopy (REM) has been applied to studying the (110) cleavage planes of GaAs crystals. Experiments were performed in commercial electron microscopes with minimal specimen preparation. Surface steps on an atomic scale and dislocations were imaged, as well as crystal fibers and other features which have not been reported before. Effects of contamination are discussed.[[fileno]]2020312010013[[department]]通識教育中