The effects of AlGaAs shell thickness and growth time on the minority carrier lifetime in the GaAs core of GaAs/AlGaAs core-shell nanowires grown by metal-organic chemical vapor deposition are investigated. The carrier lifetime increases with increasing AThe Australian Research Council (ARC) is acknowledged for its financial support
The use of compound semiconductor heterostructures to create electron confinement has enabled the hi...
We have investigated the growth, structural properties and photoluminescence of novel GaAs/AlGaAs ra...
Group III-V compound semiconductor nanowires with radial modulation of the materials composition and...
The effects of AlGaAs shell thickness and growth time on the minority carrier lifetime in the GaAs c...
The effects of AlGaAs shell thickness and growth time on the minority carrier lifetime in the GaAs c...
The effects of AlGaAs shell thickness and growth time on the minority carrier lifetime in the GaAs c...
The effects of AlGaAs shell thickness and growth time on the minority carrier lifetime in the GaAs c...
The effects of AlGaAs shell thickness and growth time on the minority carrier lifetime in the GaAs c...
GaAs/AlxGa1-xAs core-shell nanowires were grown by metal organic chemical vapour deposition with Au-...
GaAs/AlxGa1-xAs core-shell nanowires were grown by metal organic chemical vapour deposition with Au-...
GaAs/AlxGa1-xAs core-shell nanowires were grown by metal organic chemical vapour deposition with Au-...
GaAs/Al xGa 1-xAs core-shell nanowires were grown by metal organic chemical vapor deposition with op...
GaAs/AlxGa1xAs core-shell nanowires were grown by metal organic chemical vapor deposition with opti...
III-V semiconductor nanowires hold outstanding potential as key component for future photonic and el...
We have investigated the growth, structural properties and photoluminescence of novel GaAs/AlGaAs ra...
The use of compound semiconductor heterostructures to create electron confinement has enabled the hi...
We have investigated the growth, structural properties and photoluminescence of novel GaAs/AlGaAs ra...
Group III-V compound semiconductor nanowires with radial modulation of the materials composition and...
The effects of AlGaAs shell thickness and growth time on the minority carrier lifetime in the GaAs c...
The effects of AlGaAs shell thickness and growth time on the minority carrier lifetime in the GaAs c...
The effects of AlGaAs shell thickness and growth time on the minority carrier lifetime in the GaAs c...
The effects of AlGaAs shell thickness and growth time on the minority carrier lifetime in the GaAs c...
The effects of AlGaAs shell thickness and growth time on the minority carrier lifetime in the GaAs c...
GaAs/AlxGa1-xAs core-shell nanowires were grown by metal organic chemical vapour deposition with Au-...
GaAs/AlxGa1-xAs core-shell nanowires were grown by metal organic chemical vapour deposition with Au-...
GaAs/AlxGa1-xAs core-shell nanowires were grown by metal organic chemical vapour deposition with Au-...
GaAs/Al xGa 1-xAs core-shell nanowires were grown by metal organic chemical vapor deposition with op...
GaAs/AlxGa1xAs core-shell nanowires were grown by metal organic chemical vapor deposition with opti...
III-V semiconductor nanowires hold outstanding potential as key component for future photonic and el...
We have investigated the growth, structural properties and photoluminescence of novel GaAs/AlGaAs ra...
The use of compound semiconductor heterostructures to create electron confinement has enabled the hi...
We have investigated the growth, structural properties and photoluminescence of novel GaAs/AlGaAs ra...
Group III-V compound semiconductor nanowires with radial modulation of the materials composition and...