High performance GaAs/AlGaAs radial heterostructure nanowires grown by MOCVD

III-V semiconductor nanowires hold outstanding potential as key component for future photonic and electronic devices, among which GaAs/AlGaAs heterostructure nanowires wires show particular promise. However, due to the large surface-to-volume ratio, the carrier lifetime and mobility of GaAs nanowires are extremely sensitive to the surface/interface states. Although nearly intrinsic exciton lifetimes have been achieved of GaAs/AlGaAs core-shell nanowires at low temperature,1 the carrier lifetimes at room temperature is still far from state-of-art. In this study, the effects of AlGaAs growth parameters on the optical properties of GaAs core nanowires have been investigated and nanosecond minority carrier lifetimes were achieved at room temperature.2 Furthermore, GaAs/AlGaAs core-multishell nanowires with GaAs quantum well tube (QWT) emitting at room temperature have been demonstrated. © 2013 IEEE