Improved resistive switching properties of solution-processed TiOx film by incorporating atomic layer deposited TiO2 layer

Kim, Insung
Jung, Seungjae
Shin, Jungho
Biju, Kuyyadi P.
Seo, Kyungah
Siddik, Manzar
Kong, Jaemin
Liu, Xinjun
Lee, Kwanghee
Hwang, Hyunsang

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Publication date

February 2016

DOI

10.1143/JJAP.50.046504

Publisher

Japan Society of Applied Physics

Journal

Japanese Journal of Applied Physics

Abstract

Resistive switching characteristics of bilayered titanium oxides layer were investigated. To improve the relatively poor electrical characteristics of solution-processed TiOx active layers, we incorporated an additional thin TiO2 (∼8 nm) layer by atomi

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Improved resistive switching properties of solution-processed TiOx film by incorporating atomic layer deposited TiO2 layer

Abstract

Extracted data

Improved resistive switching properties of solution-processed TiOx film by incorporating atomic layer deposited TiO2 layer

Abstract

Extracted data

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