Improved resistive switching properties of solution processed ti O 2 thin films
- Biju, Kuyyadi P.
- Liu, Xinjun
- Bourim, El Mostafa
- Kim, Insung
- Jung, Seungjae
- Park, Jubong
- Hwang, Hyunsang
Publication date
February 2016
DOI Publisher
The Electrochemical Society ISSN
1099-0062 Journal
Electrochemical and Solid-State Letters Citation count (estimate)
5Abstract
Resistive switching characteristics of low temperature sol-gel processed (250°C) Ti O2 thin films are investigated. The Pt/TiO 2/Pt device exhibits bipolar switching with a uniform high resistance state compared to the low resistance state. Reliability
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