Compact modeling of parameter variations of nanoscale CMOS due to random dopant fluctuation

In nanoscale CMOS design, the compact modeling of random dopant fluctuation (RDF), which is the major variability source, is crucial important to bridge the variation aware design to the underlying physics. In this paper the variability modeling taking both threshold voltage (Vth) and mobility (??) into account is presented. The difference between the proposed method and the traditional approach using only Vth variation for RDF is compared and discussed.EI