The characteristics of terahertz (THz) radiation from the surface of InN excited by the femtosecond laser pulses are presented. The effect of intensity and central wavelength of the excited laser pulse on THz emission are studied experimentally. THz radiations from the surface emission of Mg-doped InN and InAs are compared. The results show the stronger dependence of THz radiation on the different intensity and central wavelength of the excitation pulses. THz radiation from InAs than InN has higher emission efficiency. However, the strong enhancement of THz emission is observed from InN with appropriate Mg concentrations. The mechanism of THz emission from InN is found to be the photo-Dember effect and the emission intensity is inversely pr...
THz pulses were used to investigate carrier dynamics in narrow-gap semiconductors. The measurement o...
Ultrafast terahertz spectroscopy can be used to probe charge and spin dynamics in semiconductors. We...
When the surface of the semiconductor is illuminated by femtosecond laser pulse electromagnetic osci...
The characteristics of terahertz radiation from an n-type InN excited by femtosecond laser pulses tu...
The characteristics of terahertz (THz) radiations from the surfaces of two kinds of narrow-band semi...
Effect of Mg doping on terahertz (THz) emission from InN with different lattice polarities was studi...
The authors report on the excitation wavelength dependence of terahertz emission from n-InN and bulk...
Spectral dependence of terahertz emission is a sensitive tool to analyze the structure of conduction...
Generation of terahertz radiation from semiconductor surfaces has great potential for investigation ...
We report the carrier density dependence of carrier dynamics of Mg-doped InN (InN:Mg) films. Recentl...
The excitation fluence and magnetic field dependence of terahertz (THz) radiation power from InAs is...
When the surface of the semiconductor is illuminated by femtosecond laser pulse electromagnetic osci...
Experimental detailsAbstract Terahertz emission from (100) p-type InAs illuminated by ultrafast near...
The terahertz (THz) wave range, bridging the gap between microwaves and the far infrared, has found ...
Generation of terahertz radiation from semiconductor surfaces has great potential for investigation ...
THz pulses were used to investigate carrier dynamics in narrow-gap semiconductors. The measurement o...
Ultrafast terahertz spectroscopy can be used to probe charge and spin dynamics in semiconductors. We...
When the surface of the semiconductor is illuminated by femtosecond laser pulse electromagnetic osci...
The characteristics of terahertz radiation from an n-type InN excited by femtosecond laser pulses tu...
The characteristics of terahertz (THz) radiations from the surfaces of two kinds of narrow-band semi...
Effect of Mg doping on terahertz (THz) emission from InN with different lattice polarities was studi...
The authors report on the excitation wavelength dependence of terahertz emission from n-InN and bulk...
Spectral dependence of terahertz emission is a sensitive tool to analyze the structure of conduction...
Generation of terahertz radiation from semiconductor surfaces has great potential for investigation ...
We report the carrier density dependence of carrier dynamics of Mg-doped InN (InN:Mg) films. Recentl...
The excitation fluence and magnetic field dependence of terahertz (THz) radiation power from InAs is...
When the surface of the semiconductor is illuminated by femtosecond laser pulse electromagnetic osci...
Experimental detailsAbstract Terahertz emission from (100) p-type InAs illuminated by ultrafast near...
The terahertz (THz) wave range, bridging the gap between microwaves and the far infrared, has found ...
Generation of terahertz radiation from semiconductor surfaces has great potential for investigation ...
THz pulses were used to investigate carrier dynamics in narrow-gap semiconductors. The measurement o...
Ultrafast terahertz spectroscopy can be used to probe charge and spin dynamics in semiconductors. We...
When the surface of the semiconductor is illuminated by femtosecond laser pulse electromagnetic osci...