Effect of sputtering on depositing platinum by focused ion beam

Focused ion beam (FIB) is a tempting maskless technique for modifying and debugging microcircuit. In this paper, the process of FIB induced platinum deposition was examined employing atomic force microscopy working on tapping mode. Geometry, of FIB patterned Pt depends on the interaction between ion beam and materials including metal organic gas, substrate and deposited Pt. According to the competition between depositions and sputtering, the Pt can be formed well only when selecting a certain range of ion flux. Ga+ ion interaction with SiO2 substrate leads to sputtering, and the SiO2 substrate surface that neighboring the deposited Pt is concave compared with the unsoiled substrate when the ion dose is larger than 200 PC/mu m(2). Under different ion current, patterned Pt central maximum height deviation at a certain ion dose can be explained by different ion sputtering rate for SiO2 and Pt. The effects of patterned Pt width extended and its on were invest gated, due to the back scattering saturation Ga- ions shoot to around and Pt redeposition. These results will help us to fabricate nanoscale structure using FIB under more accurate control.Engineering, Electrical & ElectronicMaterials Science, MultidisciplinaryPhysics, Condensed MatterCPCI-S(ISTP)