A 1.55 mu m hybrid InGaAsP-Si laser was fabricated by the selective area metal bonding method. Room temperature continuous lasing with a maximum output power of 0.45 mW is realized.Engineering, Electrical & ElectronicOpticsEICPCI-S(ISTP)
A 1.5-mu m InGaAsP/ITO/Si hybrid laser with indium tin oxide (ITO) as both a cathode and a light-cou...
An evanescently coupled InGaAsP-Si hybrid laser with a buried ridge stripe (BRS) structure based on ...
A number of important breakthroughs in the past decade have focused attention on Si as a photonic pl...
A 1.55-mu m hybrid InGaAsP-Si laser was fabricated by the selective-area metal bonding method. Two S...
An evanescently-coupled, hybrid InGaAsP-Si laser operating at 1.55 ??m is presented by selective are...
A 1.55-mu m InGaAsP-Si hybrid laser operating at 10 degrees C under continuous-wave operation is fab...
An evanescently-coupled, hybrid InGaAsP-Si laser operating at 1.55 µm is presented by selective area...
A pulsed InGaAsP-Si hybrid laser is fabricated using metal bonding. A novel structure in which the o...
A pulsed InGaAsP-Si hybrid laser is fabricated using metal bonding. A novel structure in which the o...
为了解决制约硅基光电集成技术发展的硅基激光器等硅基光源的制备问题，提出了一种新颖的选区金属键合方法，解决了传统金属键合方法中光吸收损耗严重的问题，并实现了直接键合方法中的高效率光耦合。该方法具有工艺简...
A four-wavelength silicon hybrid laser array operating at room temperature is realized by evanescent...
A four-wavelength silicon hybrid laser array operating at room temperature is realized by evanescent...
A room temperature silicon co-integrated light source module was realized by using a selective area ...
Abstract Silicon evanescent lasers and amplifiers have been demonstrated utilizing low temperature w...
An evanescently coupled InGaAsP-Si hybrid laser with a buried ridge stripe (BRS) structure based on ...
A 1.5-mu m InGaAsP/ITO/Si hybrid laser with indium tin oxide (ITO) as both a cathode and a light-cou...
An evanescently coupled InGaAsP-Si hybrid laser with a buried ridge stripe (BRS) structure based on ...
A number of important breakthroughs in the past decade have focused attention on Si as a photonic pl...
A 1.55-mu m hybrid InGaAsP-Si laser was fabricated by the selective-area metal bonding method. Two S...
An evanescently-coupled, hybrid InGaAsP-Si laser operating at 1.55 ??m is presented by selective are...
A 1.55-mu m InGaAsP-Si hybrid laser operating at 10 degrees C under continuous-wave operation is fab...
An evanescently-coupled, hybrid InGaAsP-Si laser operating at 1.55 µm is presented by selective area...
A pulsed InGaAsP-Si hybrid laser is fabricated using metal bonding. A novel structure in which the o...
A pulsed InGaAsP-Si hybrid laser is fabricated using metal bonding. A novel structure in which the o...
为了解决制约硅基光电集成技术发展的硅基激光器等硅基光源的制备问题，提出了一种新颖的选区金属键合方法，解决了传统金属键合方法中光吸收损耗严重的问题，并实现了直接键合方法中的高效率光耦合。该方法具有工艺简...
A four-wavelength silicon hybrid laser array operating at room temperature is realized by evanescent...
A four-wavelength silicon hybrid laser array operating at room temperature is realized by evanescent...
A room temperature silicon co-integrated light source module was realized by using a selective area ...
Abstract Silicon evanescent lasers and amplifiers have been demonstrated utilizing low temperature w...
An evanescently coupled InGaAsP-Si hybrid laser with a buried ridge stripe (BRS) structure based on ...
A 1.5-mu m InGaAsP/ITO/Si hybrid laser with indium tin oxide (ITO) as both a cathode and a light-cou...
An evanescently coupled InGaAsP-Si hybrid laser with a buried ridge stripe (BRS) structure based on ...
A number of important breakthroughs in the past decade have focused attention on Si as a photonic pl...
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