1550-nm evanescent hybrid InGaAsP–Si laser with buried ridge stripe structure

An evanescently coupled InGaAsP-Si hybrid laser with a buried ridge stripe (BRS) structure based on a selective area metal bonding method is demonstrated. There are the advantages of good optical field, high thermal performance, and improved carrier and photon confinement by adopting this BRS laser structure. The III-V waveguide with the first-order grating corrugations is fabricated by conventional holographic lithography and standard photolithography. A threshold current as low as 5 mA at room temperature in continuous-wave operation and a side-mode suppression ratio as high as 40 dB with mode-hop free higher than 45 °C were achieved