Study of screen printed metallization for polysilicon based passivating contacts
- Çiftpinar, Hande E.
- Stodolny, Maciej K.
- Wu, Yu
- Janssen, Gaby J.M.
- Löffler, Jochen
- Schmitz, Jurriaan
- Lenes, Martijn
- Luchies, Jan Marc
- Geerligs, Bart L.J.
DOIAbstract
We investigate contacting of n- and p-type polysilicon (polySi) passivating contact layers with industrial screen-printed metal pastes, examining both fire through (FT) and non-fire through (NFT) pastes. The n- and p-type polySi layers, deposited by low pressure chemical vapour deposition and doped by POCl3 diffusion, phosphorus implant, or BBr3 diffusion, result in excellent Jo, even for 50 nm thickness (<2 fA/cm2 for n-polySi, <10 fA/cm2 for p-polySi). The contact recombination is investigated by photoluminescence, and by cell test structures to determine Voc as a function of metallization fraction. The contact resistance is investigated by transfer length method (TLM). The contacts are also extensively studied by high resolution electron...
Add to ORKG