Voltage dependence of electroporation and knockdown efficiency in AMO-1 cells.

<p>Transfection of AMO-1 cells across a range of voltages using an expression vector for EGFP (pEGFP-N3) and a stealth siRNA against ERK2 (stERK2) in the electroporation mixture. Top panel: increases of the fractions of EGFP-expressing as well as of dead cells with higher voltages (top row). Cells taken in culture after OptiPrep-mediated debris removal reflect only the increase in transfection efficiency for the EGFP expression plasmid (bottom row). Middle panel: purified AMO-1 cells (those shown in the upper panel, bottom row) after culture for another 4 days. Top row: EGFP expression. Bottom row: annexin V-PromoFluor 647/PI staining. Even for the highest voltage used (320 V) the purified live cell fraction did not fare worse in subsequent culture than cells electroporated under milder conditions. Bottom panel: Western analysis of ERK2 knockdown at days 3 and 5 post-electroporation from the same cultures from which the FACS panels were derived. Efficient siRNA-mediated ERK2 knockdown was achieved at voltages significantly lower than required for the best levels of plasmid electroporation. However, a lower limit for successful knockdown was reached between the settings for 160 and 200 V. Shown is a representative experiment of two complete sets (Western blotting included). Anti-ERK1/2 antibody: CST.