Model characterization of SGLT1-associated currents during voltage clamp as a function of SGLT1-substrate concentration, <i>G</i>_SGLT1, and voltage pulse, <i>V</i>_pulse and parameters as for GLUTag model.

<p>The voltage-clamp protocol consisted in applying 1 s depolarization at <i>t</i> = 0.5 s from a holding potential of -70 mV. A: Simulated SGLT1-associated current in response to different voltage pulses (<i>V</i>_pulse = −50, −30, −10, 10, 30 mV) and constant <i>G</i>_SGLT1 = 5 mM. B: Simulated SGLT1-associated current in response to a voltage pulse (<i>V</i>_pulse = −10 mV) and different <i>G</i>_SGLT1 = 0.1, 1, 5, 10, 20 mM. C: Simulated peak SGLT1-associated current in response to voltage pulses as a function of <i>G</i>_SGLT1 and <i>V</i>_pulse. D: Simulated steady-state SGLT1-associated current in response to voltage pulses as a function of <i>G</i>_SGLT1 and <i>V</i>_pulse.