Electron tunneling through high-quality, atomically thin dielectric films can provide a critical enabling technology for future microelectronics, bringing enhanced quantum coherent transport, fast speed, small size, and high energy efficiency. A fundamental challenge is in controlling the interface between the dielectric and device electrodes. An interfacial layer (IL) will contain defects and introduce defects in the dielectric film grown atop, preventing electron tunneling through the formation of shorts. In this work, we present the first systematic investigation of the IL in Al<sub>2</sub>O<sub>3</sub> dielectric films of 1–6 Å’s in thickness on an Al electrode. We integrated several advanced approaches: molecular dynamics to simulate I...
This work is concerned with Al/Al-oxide(AlOx)/Al-layer systems which are important for Josephson-jun...
Interface passivation layers have recently been incorporated into InP/high-k dielectric stacks using...
During atomic layer deposition of high permittivity (high-k) metal oxide gate dielectrics, an interf...
Dielectric properties of ultrathin Al<sub>2</sub>O<sub>3</sub> (1.1–4.4 nm) in metal–insulator–metal...
Metal-Insulator-Metal tunnel junctions (MIMTJ) are a core building block for a variety of microelect...
Metal-insulator-metal tunnel junctions are common throughout the microelectronics industry. The indu...
Metal-insulator-metal tunnel junctions are common throughout the microelectronics industry. The indu...
As metal/insulator/metal tunnel junctions (MIMTJs), such as magnetic tunnel junctions and Josephson ...
Metal-Insulator-Metal tunnel junctions (MIMTJ) are a core building block for a variety of microelect...
High-quality thin insulating films on graphene (Gr) are essential for field-effect transistors (FETs...
Temperature-dependent current-voltage measurements showed Poole–Frenkel conduction behavior through ...
In order to continue with metal-oxide-semiconductors (CMOS) transistor scaling and to reduce the pow...
This is the published version. Copyright 2014 American Institute of PhysicsAtomic Layer Deposition (...
[[abstract]]Molecular beam epitaxy (MBE) grown high dielectrics of Al2O3 and HfO2 are employed as t...
Abstract : The development of metallic single electron transistor (SET) depends on the downscaling a...
This work is concerned with Al/Al-oxide(AlOx)/Al-layer systems which are important for Josephson-jun...
Interface passivation layers have recently been incorporated into InP/high-k dielectric stacks using...
During atomic layer deposition of high permittivity (high-k) metal oxide gate dielectrics, an interf...
Dielectric properties of ultrathin Al<sub>2</sub>O<sub>3</sub> (1.1–4.4 nm) in metal–insulator–metal...
Metal-Insulator-Metal tunnel junctions (MIMTJ) are a core building block for a variety of microelect...
Metal-insulator-metal tunnel junctions are common throughout the microelectronics industry. The indu...
Metal-insulator-metal tunnel junctions are common throughout the microelectronics industry. The indu...
As metal/insulator/metal tunnel junctions (MIMTJs), such as magnetic tunnel junctions and Josephson ...
Metal-Insulator-Metal tunnel junctions (MIMTJ) are a core building block for a variety of microelect...
High-quality thin insulating films on graphene (Gr) are essential for field-effect transistors (FETs...
Temperature-dependent current-voltage measurements showed Poole–Frenkel conduction behavior through ...
In order to continue with metal-oxide-semiconductors (CMOS) transistor scaling and to reduce the pow...
This is the published version. Copyright 2014 American Institute of PhysicsAtomic Layer Deposition (...
[[abstract]]Molecular beam epitaxy (MBE) grown high dielectrics of Al2O3 and HfO2 are employed as t...
Abstract : The development of metallic single electron transistor (SET) depends on the downscaling a...
This work is concerned with Al/Al-oxide(AlOx)/Al-layer systems which are important for Josephson-jun...
Interface passivation layers have recently been incorporated into InP/high-k dielectric stacks using...
During atomic layer deposition of high permittivity (high-k) metal oxide gate dielectrics, an interf...