Molecular beam epitaxy grown template for subsequent atomic layer deposition of high κ dielectrics

[[abstract]]Molecular beam epitaxy (MBE) grown high dielectrics of Al2O3 and HfO2 are employed as templates to suppress effectively the oxide/Si interfacial layer formation during the subsequent atomic layer deposition (ALD) growth. The absence of the interfacial layer was confirmed using x-ray photoelectron spectroscopy and high resolution transmission electron microscopy. Two composite films consisting of ALD Al2O3(1.9 nm)/MBE Al2O3(1.4 nm) and ALD Al2O3(3.0 nm)/MBE HfO2(2.0 nm) showed overall κ values of 9.1 and 11.5, equivalent oxide thicknesses of 1.41 and 1.7 nm, Dit of 2.2×1011 and 2×1011 cm^-2 eV^-1, and leakage current densities of 2.4×10^-2 A/cm2 at Vfb^-1 V and 1.1×10^-4 A/cm2 at Vfb+1 V, respectively. The attainment of high dielectric constant suggests that there is no low capacitor in series near the oxide/Si interface. ©2006 American Institute of Physics[[fileno]]2020326010098[[department]]材料科學工程學