Thin films of neodymium-modified bismuth titanate Bi3.44Nd0.56Ti3O12 (BNT) were grown on Pt/TiO2/SiO2/Si substrates using chemical solution deposition method. The capacitors made by applying top Au electrodes on BNT films showed significantly improved values of the remanent polarization as compared to that using bismuth titanate Bi4Ti3O12 (BT) films. The 2P(r) value for the BNT capacitors was determined to be equal to 38 muC/cm(2) at an applied voltage of 24 V, whereas, for Bi4Ti3O12 ( BT) capacitors a value of 20 muC/cm(2) was measured at the same applied voltage. The maximum piezoelectric and pyroelectric coefficients of 22 pm/V and 112 muC/m(2) K respectively, were measured for the BNT thin films
Bi3NbO7 (BNO) thin films were deposited on Pt/TiO2/SiO2/Si (100) substrates at room temperature from...
Lanthanum-modified bismuth titanate, Bi4-xLaxTi3O12 (BLT), with x ranging from 0 to 0.75 was grown o...
Bi4Ti3O12 thin films have been produced on Pt/TiO2/SiO2/Si buffer layers by spin-coating using a mix...
Fatigue-free and highly c-axis oriented Bi4-xPrxTi3O12 (BPrT, x=0.85) thin films were grown on Pt/Ti...
In this paper, we analyze and explain the thickness dependent microstructure, surface morphology evo...
Fatigue-free Gd-modified bismuth titanate (Bi3.15Gd0.85Ti3O12; BGdT) film capacitors having stable c...
The (1 1 7) and (0 0 1 0)-oriented Bi4Ti3O12 thin films were fabricated on Pt/Ti/SiO2/Si substrates ...
Abstract Phase pure perovskite (1-x)Bi1/2Na1/2TiO3 – xBi1/2K1/2TiO3 (BNKT) thin films were successfu...
Fatigue-free and highly c-axis oriented Bi3.15Sm0.85Ti3O12 (BSmT) thin films were grown on Pt/TiO2/S...
This is an author's peer-reviewed final manuscript, as accepted by the publisher. The published arti...
Lanthanum-modified bismuth titanate, Bi4-xLaxTi3O12 (BLT), thin films with a La concentration of 0.7...
[[abstract]]We report on the properties of Nd-substituted bismuth titanate Bi4 - xNdxTi3O12 (BNdT) t...
Lanthanum-modified bismuth titanate, Bi4-xLaxTi3O12 (BLT), thin films with a La concentration rangin...
Bismuth titanate Bi4Ti3O12, is one of the bismuth based layered ferroelectric materials that is a ca...
Lanthanum-doped Bi4Ti3O12 thin films (BLT) were deposited on Pt/Ti/SiO2/Si substrates using a polyme...
Bi3NbO7 (BNO) thin films were deposited on Pt/TiO2/SiO2/Si (100) substrates at room temperature from...
Lanthanum-modified bismuth titanate, Bi4-xLaxTi3O12 (BLT), with x ranging from 0 to 0.75 was grown o...
Bi4Ti3O12 thin films have been produced on Pt/TiO2/SiO2/Si buffer layers by spin-coating using a mix...
Fatigue-free and highly c-axis oriented Bi4-xPrxTi3O12 (BPrT, x=0.85) thin films were grown on Pt/Ti...
In this paper, we analyze and explain the thickness dependent microstructure, surface morphology evo...
Fatigue-free Gd-modified bismuth titanate (Bi3.15Gd0.85Ti3O12; BGdT) film capacitors having stable c...
The (1 1 7) and (0 0 1 0)-oriented Bi4Ti3O12 thin films were fabricated on Pt/Ti/SiO2/Si substrates ...
Abstract Phase pure perovskite (1-x)Bi1/2Na1/2TiO3 – xBi1/2K1/2TiO3 (BNKT) thin films were successfu...
Fatigue-free and highly c-axis oriented Bi3.15Sm0.85Ti3O12 (BSmT) thin films were grown on Pt/TiO2/S...
This is an author's peer-reviewed final manuscript, as accepted by the publisher. The published arti...
Lanthanum-modified bismuth titanate, Bi4-xLaxTi3O12 (BLT), thin films with a La concentration of 0.7...
[[abstract]]We report on the properties of Nd-substituted bismuth titanate Bi4 - xNdxTi3O12 (BNdT) t...
Lanthanum-modified bismuth titanate, Bi4-xLaxTi3O12 (BLT), thin films with a La concentration rangin...
Bismuth titanate Bi4Ti3O12, is one of the bismuth based layered ferroelectric materials that is a ca...
Lanthanum-doped Bi4Ti3O12 thin films (BLT) were deposited on Pt/Ti/SiO2/Si substrates using a polyme...
Bi3NbO7 (BNO) thin films were deposited on Pt/TiO2/SiO2/Si (100) substrates at room temperature from...
Lanthanum-modified bismuth titanate, Bi4-xLaxTi3O12 (BLT), with x ranging from 0 to 0.75 was grown o...
Bi4Ti3O12 thin films have been produced on Pt/TiO2/SiO2/Si buffer layers by spin-coating using a mix...