Bi4Ti3O12 Ferroelectric Thin Films: Morphology and Electrical Characteristics
- Soares-Carvalho, F.
- Jauberteau, Isabelle
- Thomas, Philippe
- Mercurio, J.
DOIAbstract
Bi4Ti3O12 thin films have been produced on Pt/TiO2/SiO2/Si buffer layers by spin-coating using a mixed bismuth-titanium alkoxide. The crystallization of Bi4Ti3O12 is observed at 480 ○C. An increase of the average grain size related to an augmentation of the roughness of the films is observed with increasing coatings number. P-E hysteresis loops confirmed the ferroelectric character of the films
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