A detailed characterization of the optical response of illuminated MESFETs due to several operating and geometrical conditions is presented. The characterization targets important optical performance factors including terminal photocurrent peak value and discharge time. A figure-of-merit is defined to quantify the overall response to these effects. The simulation results should be very useful in device operation and optimization
In microwave GaAs MESFETs, carrier transport is a strong function of carrier energy. When illuminate...
In microwave GaAs MESFETs, carrier transport is a strong function of carrier energy. When illuminate...
In microwave GaAs MESFETs, carrier transport is a strong function of carrier energy. When illuminate...
A detailed characterization of the optical response of illuminated MESFETs due to several operating ...
A detailed characterization of the optical response of illuminated MESFETs due to several operating ...
A detailed characterization of the optical response of illuminated MESFETs due to several operating ...
An accurate model for the optimum design of optically controlled MOSFET structures is used. This is ...
An accurate model for the optimum design of optically controlled MOSFET structures is used. This is ...
An accurate model for the optimum design of optically controlled MOSFET structures is used. This is ...
An accurate model for the optimum design of optically controlled MOSFET structures is used. This is ...
This paper presents the characterization of illuminated high-frequency active devices using a time d...
This paper presents the characterization of illuminated high-frequency active devices using a time d...
This paper presents the characterization of illuminated high-frequency active devices using a time -...
This paper presents the characterization of illuminated high-frequency active devices using a time -...
This paper presents the characterization of illuminated high-frequency active devices using a time -...
In microwave GaAs MESFETs, carrier transport is a strong function of carrier energy. When illuminate...
In microwave GaAs MESFETs, carrier transport is a strong function of carrier energy. When illuminate...
In microwave GaAs MESFETs, carrier transport is a strong function of carrier energy. When illuminate...
A detailed characterization of the optical response of illuminated MESFETs due to several operating ...
A detailed characterization of the optical response of illuminated MESFETs due to several operating ...
A detailed characterization of the optical response of illuminated MESFETs due to several operating ...
An accurate model for the optimum design of optically controlled MOSFET structures is used. This is ...
An accurate model for the optimum design of optically controlled MOSFET structures is used. This is ...
An accurate model for the optimum design of optically controlled MOSFET structures is used. This is ...
An accurate model for the optimum design of optically controlled MOSFET structures is used. This is ...
This paper presents the characterization of illuminated high-frequency active devices using a time d...
This paper presents the characterization of illuminated high-frequency active devices using a time d...
This paper presents the characterization of illuminated high-frequency active devices using a time -...
This paper presents the characterization of illuminated high-frequency active devices using a time -...
This paper presents the characterization of illuminated high-frequency active devices using a time -...
In microwave GaAs MESFETs, carrier transport is a strong function of carrier energy. When illuminate...
In microwave GaAs MESFETs, carrier transport is a strong function of carrier energy. When illuminate...
In microwave GaAs MESFETs, carrier transport is a strong function of carrier energy. When illuminate...