An accurate model for the optimum design of optically controlled MOSFET structures is used. This is based on the energy formulation of the transport equation coupled with optical energy conversion. Time domain simulations show the significant effect of electrode spacing, specifically, the drain-gate separation which was varied from 0.3 to 1.4 /spl mu/m. Devices with different drain-gate spacing respond differently to a fixed-waist Gaussian light pulse in terms of peak output photocurrent, waveform rise time and waveform fall time
In recent years, scaling down the dimensions of electronic devices has driven dramatic improvements ...
The development of a new semiconductor device is a process which often involves an iterative cycle o...
The entire dissertation/thesis text is included in the research.pdf file; the official abstract appe...
An accurate model for the optimum design of optically controlled MOSFET structures is used. This is ...
An accurate model for the optimum design of optically controlled MOSFET structures is used. This is ...
An accurate model for the optimum design of optically controlled MOSFET structures is used. This is ...
In microwave GaAs MESFETs, carrier transport is a strong function of carrier energy. When illuminate...
In microwave GaAs MESFETs, carrier transport is a strong function of carrier energy. When illuminate...
In microwave GaAs MESFETs, carrier transport is a strong function of carrier energy. When illuminate...
A detailed characterization of the optical response of illuminated MESFETs due to several operating ...
A detailed characterization of the optical response of illuminated MESFETs due to several operating ...
A detailed characterization of the optical response of illuminated MESFETs due to several operating ...
A detailed characterization of the optical response of illuminated MESFETs due to several operating ...
This paper presents the characterization of illuminated high-frequency active devices using a time d...
This paper presents the characterization of illuminated high-frequency active devices using a time d...
In recent years, scaling down the dimensions of electronic devices has driven dramatic improvements ...
The development of a new semiconductor device is a process which often involves an iterative cycle o...
The entire dissertation/thesis text is included in the research.pdf file; the official abstract appe...
An accurate model for the optimum design of optically controlled MOSFET structures is used. This is ...
An accurate model for the optimum design of optically controlled MOSFET structures is used. This is ...
An accurate model for the optimum design of optically controlled MOSFET structures is used. This is ...
In microwave GaAs MESFETs, carrier transport is a strong function of carrier energy. When illuminate...
In microwave GaAs MESFETs, carrier transport is a strong function of carrier energy. When illuminate...
In microwave GaAs MESFETs, carrier transport is a strong function of carrier energy. When illuminate...
A detailed characterization of the optical response of illuminated MESFETs due to several operating ...
A detailed characterization of the optical response of illuminated MESFETs due to several operating ...
A detailed characterization of the optical response of illuminated MESFETs due to several operating ...
A detailed characterization of the optical response of illuminated MESFETs due to several operating ...
This paper presents the characterization of illuminated high-frequency active devices using a time d...
This paper presents the characterization of illuminated high-frequency active devices using a time d...
In recent years, scaling down the dimensions of electronic devices has driven dramatic improvements ...
The development of a new semiconductor device is a process which often involves an iterative cycle o...
The entire dissertation/thesis text is included in the research.pdf file; the official abstract appe...