Plasma Damage to NMOS Capacitors

High frequency C-V curves were taken of NMOS capacitors to determine the effect that a RF oxygen plasma has on the underlying thin gate oxide. This plasma was used to remove a positive photoresist. The C-V curves show a threshold voltage shift of 3.75 volts with respect to the undamaged capacitors. The C-V curves also show that the thinner were more affected than the thicker oxides