Plasma treatments are widely used in microelectronic industry but they may leave some residual passivated damage in the gate oxides at the end of the processing. The plasma-induced damage can be amplified by metal interconnects (antenna) attached to the gate during the plasma treatments. Ionising radiation reactivates this latent damage, which produces enhanced oxide charge and Si/SiO2 interface state density. Two CMOS technologies have been investigated, with 5 and 7 nm gate oxides. Threshold voltage shifts, transconductance decrease, and interface traps build-up are always larger for plasma damaged devices than for reference devices
In this work we have focused our attention on MOSFETs, which are the real basic element of all CMOS ...
We have briefly reviewed the most important degradation mechanisms affecting ultra-thin gate oxides ...
We have briefly reviewed the most important degradation mechanisms affecting ultra-thin gate oxides ...
Plasma treatments are widely used in microelectronic industry but they may leave some residual passi...
The radiation impact on antenna devices can give new insights on basic mechanisms underlying the lat...
The radiation impact on antenna devices can give new insights on basic mechanisms underlying the lat...
Two mechanisms of plasma processing damage to thin gate oxide structures were studied. Thin 17.5 mu ...
While plasma-induced charging damage has been widely studied in recent years, much of the work has c...
A novel plasma-process induced damage depassivation method is proposed. Using a staircase-like stres...
Plasma processing has become an integral part of the IC fabrication, since it offers advantages in t...
Indispensable in CMOS manufacturing, plasma treatments may result in a latent damage in gate oxides....
This thesis studied the plasma-induced damage to Si and strained Si1-xGex, and the resulting change ...
This thesis studied the plasma-induced damage to Si and strained Si1-xGex, and the resulting change ...
This thesis studied the plasma-induced damage to Si and strained Si1-xGex, and the resulting change ...
INVITED PAPER We have briefly reviewed the most important degradation mechanisms affecting ultra-thi...
In this work we have focused our attention on MOSFETs, which are the real basic element of all CMOS ...
We have briefly reviewed the most important degradation mechanisms affecting ultra-thin gate oxides ...
We have briefly reviewed the most important degradation mechanisms affecting ultra-thin gate oxides ...
Plasma treatments are widely used in microelectronic industry but they may leave some residual passi...
The radiation impact on antenna devices can give new insights on basic mechanisms underlying the lat...
The radiation impact on antenna devices can give new insights on basic mechanisms underlying the lat...
Two mechanisms of plasma processing damage to thin gate oxide structures were studied. Thin 17.5 mu ...
While plasma-induced charging damage has been widely studied in recent years, much of the work has c...
A novel plasma-process induced damage depassivation method is proposed. Using a staircase-like stres...
Plasma processing has become an integral part of the IC fabrication, since it offers advantages in t...
Indispensable in CMOS manufacturing, plasma treatments may result in a latent damage in gate oxides....
This thesis studied the plasma-induced damage to Si and strained Si1-xGex, and the resulting change ...
This thesis studied the plasma-induced damage to Si and strained Si1-xGex, and the resulting change ...
This thesis studied the plasma-induced damage to Si and strained Si1-xGex, and the resulting change ...
INVITED PAPER We have briefly reviewed the most important degradation mechanisms affecting ultra-thi...
In this work we have focused our attention on MOSFETs, which are the real basic element of all CMOS ...
We have briefly reviewed the most important degradation mechanisms affecting ultra-thin gate oxides ...
We have briefly reviewed the most important degradation mechanisms affecting ultra-thin gate oxides ...