ヨウソ オ モチイタ カガク ユソウ ハンノウ ホウ ニヨル ZnSe ケッショウ ノ フォトルミネセンス (ダイ1ポウ)

ZnSe crystals were grown by a chemical transport method with iodine. These crystalsobtained above method, were zincblended (cubic) structure.These crystals were heated in molten zinc at 1000°C for four and eight hours to decreasethe resistivities of ZnSe crystals, and then diffused tellurium at 1000°C for two hours toinvestigate the effect of tellurium diffusion on photoluminescence properties.As the results of heat treatment and diffusion treatment ; we certified that the resistivities of ZnSe crystals decreased from 10^<7> Ω･cm to 20 Ω･cm after heat treatment in moltenzinc for eight hours, and that a peak position of photoluminescence spectrum of ZnSe crystaldiffused tellurium, shifted to a short wave lenghth range at 77 K and 4.2 K