High-resolution electron-energy-loss spectroscopy (HREELS) has been used as a noninvasive probe to investigate the plasmon excitations and accumulation layers and determine the nominal electron mobility in the near-surface region of undoped molecular beam epitaxial-grown InAs(100). HREEL spectra were recorded at 300 and 600 K, over a wide range of incident electron energies, to observe the effects of temperature on the electron mobility, carrier concentration, surface state density, accumulation layer profile, and plasmon damping mechanisms. These data have been analyzed using semiclassical dielectric theory with a three-layer model, using a simple Drude dielectric function. A separate wave-vector-dependent Landau damping term was included ...
On low-k flexible substrates, we obtained InAs films with thickness ranging from several hundreds of...
The free-carrier-induced plasma excitation in heavily doped p-type GaAs(110) is studied by means of ...
We study strongly confined plasmons in ultrathin gold and silver films by simulating electron energy...
High-resolution electron-energy-loss spectroscopy (HREELS) has been used to study the (001) surface ...
The electronic properties of n-type narrow gap III-V semiconductor surfaces and interfaces are inves...
High-resolution electron energy-loss spectroscopy (HREELS) has been used to study the surface-plasmo...
High resolution electron energy loss spectroscopy (HREELS) has been used to study the surface plasmo...
The electronic properties of n-type narrow gap III-V semiconductor surfaces and interfaces are inves...
The behaviour of the conduction band electron plasmon at the polar surfaces of InAs and InSb has bee...
We have investigated the plasmon modes present at the (001) and (111) surfaces of heavily doped p-ty...
The passivation of InAs(001) surfaces by exposure to sulphur in ultra-high vacuum (UHV), followed by...
The phonon and plasmon excitations of both n- and p-type InSb(100) have been studied using high reso...
High resolution electron energy loss spectroscopy, dielectric theory simulations, and charge profile...
For almost all n-type zinc-blende III-V semiconductor free surfaces a depletion layer is observed. I...
The effects of in situ sulphur passivation on the electronic properties of n-type InAs(0 0 1) have b...
On low-k flexible substrates, we obtained InAs films with thickness ranging from several hundreds of...
The free-carrier-induced plasma excitation in heavily doped p-type GaAs(110) is studied by means of ...
We study strongly confined plasmons in ultrathin gold and silver films by simulating electron energy...
High-resolution electron-energy-loss spectroscopy (HREELS) has been used to study the (001) surface ...
The electronic properties of n-type narrow gap III-V semiconductor surfaces and interfaces are inves...
High-resolution electron energy-loss spectroscopy (HREELS) has been used to study the surface-plasmo...
High resolution electron energy loss spectroscopy (HREELS) has been used to study the surface plasmo...
The electronic properties of n-type narrow gap III-V semiconductor surfaces and interfaces are inves...
The behaviour of the conduction band electron plasmon at the polar surfaces of InAs and InSb has bee...
We have investigated the plasmon modes present at the (001) and (111) surfaces of heavily doped p-ty...
The passivation of InAs(001) surfaces by exposure to sulphur in ultra-high vacuum (UHV), followed by...
The phonon and plasmon excitations of both n- and p-type InSb(100) have been studied using high reso...
High resolution electron energy loss spectroscopy, dielectric theory simulations, and charge profile...
For almost all n-type zinc-blende III-V semiconductor free surfaces a depletion layer is observed. I...
The effects of in situ sulphur passivation on the electronic properties of n-type InAs(0 0 1) have b...
On low-k flexible substrates, we obtained InAs films with thickness ranging from several hundreds of...
The free-carrier-induced plasma excitation in heavily doped p-type GaAs(110) is studied by means of ...
We study strongly confined plasmons in ultrathin gold and silver films by simulating electron energy...